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题名: Design of an epi-thermal neutron flux intensity monitor with GaN wafer for boron neutron capture therapy
作者: Guan, XC; Manabe, M; Murata, I; Wang, TS(王铁山)
收录类别: SCIE ; EI
出版日期: 2015-04-03
刊名: JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY
卷号: 52, 期号:4, 页码:503-508
出版者: TAYLOR & FRANCIS
出版地: ABINGDON
英文摘要: Boron neutron capture therapy (BNCT) is a promising cancer therapy. Epi-thermal neutron (0.5eV < E-n < 10keV) flux intensity is one of the basic characteristics for modern BNCT. In this work, based on the Ga-71(n,gamma)Ga-72 reaction, a new simple monitor with gallium nitride (GaN) wafer as activation material was designed by Monte Carlo simulations to precisely measure the absolute integral flux intensity of epi-thermal neutrons especially for practical BNCT. In the monitor, a GaN wafer was positioned in the center of a polyethylene sphere as neutron moderator covered with cadmium (Cd) layer as thermal neutron absorber outside. The simulation results and related analysis indicated that the epi-thermal neutron flux intensity could be precisely measured by the presently designed monitor.
关键词: GaN wafer ; epi-thermal neutron ; Monte Carlo simulation ; flux intensity monitor ; activation method ; BNCT
作者部门: [Guan, Xingcai ; Wang, Tieshan] Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Gansu, Peoples R China ; [Guan, Xingcai ; Manabe, Masanobu ; Murata, Isao] Osaka Univ, Div Sustainable Energy & Environm Engn, Grad Sch Engn, Suita, Osaka 5650871, Japan
通讯作者: Guan, XC (reprint author), Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Gansu, Peoples R China.
学科分类: Nuclear Science & Technology
文章类型: Article
所属项目编号: Mitsubishi Heavy Industries Mechatronics Systems, Ltd ; China Scholarship Council (CSC)
所属项目名称: 国家留学基金委项目
项目资助者: CSC
语种: 英语
DOI: 10.1080/00223131.2014.956831
ISSN号: 0022-3131
WOS记录号: WOS:000350383700006
EI记录号: 20151100631674
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内容类型: 期刊论文
URI标识: http://ir.lzu.edu.cn/handle/262010/117425
Appears in Collections:核科学与技术学院_期刊论文

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Recommended Citation:
Guan, XC,Manabe, M,Murata, I,et al. Design of an epi-thermal neutron flux intensity monitor with GaN wafer for boron neutron capture therapy[J]. JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY,2015,52(4):503-508.
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