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兰州大学机构库  > 物理科学与技术学院  > 期刊论文
题名: Thermal annealing and magnetic anisotropy of NiFe thin films on n(+)-Si for spintronic device applications
其他题名: Thermal annealing and magnetic anisotropy of NiFe thin films on n+-Si for spintronic device applications
作者: Lu, QH; Huang, R; Wang, LS; Wu, ZG; Li, C; Luo, Q; Zuo, SY; Li, J; Peng, DL; Han, GL; Yan, PX(闫鹏勋)
收录类别: SCIE ; EI
出版日期: 2015-11-15
刊名: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
卷号: 394, 页码:253-259
出版者: ELSEVIER
出版地: AMSTERDAM
英文摘要: To ensure that the magnetic metal electrodes can meet the requirements of the spin injection, NiFe films prepared both on HfO2 dielectric layer and n(+)-Si directly by sputtering deposition, and treated by conventional furnace annealing and/or high vacuum magnetic field annealing were investigated. It was found that thermal annealing at 250 degrees C improved the crystalline quality and reduced surface roughness of the NiFe films, thus enhancing its saturation magnetization intensity. The 100 nm thick NiFe films had Loo large coercive force and saturation magnetization intensity in vertical direction to meet the requirements of Hanle curve detection. While, 30 nm thick NiFe films showed paramagnetic hysteresis loops in vertical direction, and the magnetization intensity of the sample after annealing at 250 degrees C for 30 min was less than 2% to the parallel when the external magnetic field was given between +/- 10 Oe. This was preferred to Hanle curve detection. The thin HfO2 dielectric layer between metal and Si partially suppressed the diffusion of Ni in NiFe into Si substrate and formation of NiSi, greatly enhancing the saturation magnetization intensity of the Al/NiFe/HfO2/Si sample by thermal annealing. Those results suggest that Al/NiFe/HfO2/Si structure, horn the point view of magnetic electrodes, would be suitable for spin injection and detection applications. (C) 2015 Elsevier B.V. All rights reserved.
关键词: NiFe ; Ni2p3 ; Spin injection electrode ; Magnetic field annealing ; Magnetic anisotropy
作者部门: [Lu, Q. H. ; Wu, Z. G. ; Zuo, S. Y. ; Yan, P. X.] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China ; [Lu, Q. H. ; Huang, R. ; Li, C. ; Li, J.] Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China ; [Lu, Q. H. ; Han, G. L.] Gansu Acad Sci, Inst Sensor Technol, Gansu Key Lab Sensor & Sensor Technol, Lanzhou 730000, Peoples R China ; [Wang, L. S. ; Luo, Q. ; Peng, D. L.] Xiamen Univ, Dept Mat Sci & Engn, Coll Mat, Xiamen 361005, Peoples R China
通讯作者: Wu, ZG (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
学科分类: Materials Science; Physics
文章类型: Article
所属项目编号: National Natural Science Foundation of China [61176092, 61474094] ; National Youth Science Foundation of China [11104232]
所属项目名称: 国家自然科学基金项目
项目资助者: NSFC
语种: 英语
DOI: 10.1016/j.jmmm.2015.06.066
ISSN号: 0304-8853
WOS记录号: WOS:000360025800041
EI记录号: 20152801020862
IR记录号: WOS:000360025800041
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内容类型: 期刊论文
URI标识: http://ir.lzu.edu.cn/handle/262010/181408
Appears in Collections:物理科学与技术学院_期刊论文

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Recommended Citation:
Lu, QH,Huang, R,Wang, LS,et al. Thermal annealing and magnetic anisotropy of NiFe thin films on n(+)-Si for spintronic device applications[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,2015,394:253-259.
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