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兰州大学机构库  > 物理科学与技术学院  > 期刊论文
题名: Voltage-Controlled Bistable Resistive Switching Behavior Based on Ni0.5Zn0.5Fe2O4/BiFeO3/Nb:SrTiO3 Heterostructures
作者: Wu, L; Dong, CH; Zhang, C; Jiang, CJ; Xue, DS(薛德胜)
收录类别: SCIE
出版日期: 2016-04
刊名: SCIENCE OF ADVANCED MATERIALS
卷号: 8, 期号:4, 页码:712-717
英文摘要: The central challenge in realizing multi-level storage lies in seeking an effective way to switch between distinct states with a controllable variable, in a reversible and reproducible manner. In this paper, with the introduction of different voltage pulses, nonvolatile bistable resistance states have been obtained in a Ni0.5Zn0.5Fe2O4/BiFeO3/Nb:SrTiO3 heterostructure. In addition, two types of resistive switching behaviors, diode-like features and traditional symmetric variations, are realized by tuning the value or direction of voltage. The resistive switching behavior is improved by inserting a Ni05Zn0.5Fe2O4 film. Good stability, excellent retention, and anti-fatigue characteristics are demonstrated at the same time. The observed bistable memory properties are attributed to modulation by the ferroelectric polarization reversal at the BiFeO3/Nb:SrTiO3 interface. Ni-Zn ferrite film layers can effectively increase the ferroelectric polarization of the sample, which eventually leads to an improvement in stability and durability. The present results further enhance the applicability of BiFeO3-based multifunctional materials in nonvolatile multi-level memory devices.
关键词: Resistive Switching Behavior ; BiFeO3/Nb:SrTiO3 Interface ; Nonvolatile Memory Devices ; Ferroelectric Polarization ; Multifunctional Materials
作者部门: [Wu, Lei ; Dong, Chunhui ; Zhang, Chao ; Jiang, Changjun ; Xue, Desheng] Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China
通讯作者: Jiang, CJ (reprint author), Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China.
学科分类: Science & Technology - Other Topics; Materials Science; Physics
文章类型: Article
所属项目编号: National Basic Research Program of China [2012CB933101] ; National Natural Science Foundation of China [11374131, 51371093]
所属项目名称: 国家自然科学基金项目 ; 国家重点基础研究发展计划以及国家重大科学研究计划(973计划)
项目资助者: NSFC ; MOST
语种: 英语
DOI: 10.1166/sam.2016.2689
ISSN号: 1947-2935
WOS记录号: WOS:000373754500003
IR记录号: WOS:000373754500003
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内容类型: 期刊论文
URI标识: http://ir.lzu.edu.cn/handle/262010/181542
Appears in Collections:物理科学与技术学院_期刊论文

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Recommended Citation:
Wu, L,Dong, CH,Zhang, C,et al. Voltage-Controlled Bistable Resistive Switching Behavior Based on Ni0.5Zn0.5Fe2O4/BiFeO3/Nb:SrTiO3 Heterostructures[J]. SCIENCE OF ADVANCED MATERIALS,2016,8(4):712-717.
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