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题名: Amazing diffusion depth of ultra-thin hafnium oxide film grown on n-type silicon by lower temperature atomic layer deposition
作者: Lu, QH; Huang, R; Lan, XL; Chi, XW; Lu, C; Li, C; Wu, ZG; Li, J; Han, GL; Yan, PX(闫鹏勋)
收录类别: SCIE ; EI
出版日期: 2016-04-15
刊名: MATERIALS LETTERS
卷号: 169, 页码:164-167
英文摘要: Hafnium diffusion from ultra-thin high-k gate dielectric HfO2 deposited on substrate by atomic layer deposition at lower temperature of 150 degrees C was investigated by using x-ray photoelectron energy spectra (XPS) analysis. The surface is the complete oxidation of HfO2, and Hf and O diffusion into Si substrate with different depths during atomic layer deposition process. Hf and O incorporation into silicon forms silicates accompany with silicides and further silicides only, respectively. An empirical formula was deduced to calculate the diffusion depth of the Hf element to 33 nm. The NisoFe(2)O/HfO2/Si contact resistance was dominated by tunneling current for the thicker HfO2 but limited by Schottky barrier height for the thinner HfO2 by setting 1.5 nm as a watershed. (C) 2016 Elsevier B.V. All rights reserved.
关键词: HfO2. ; Hafnium silicide ; Hafnium silicate ; Diffusion depth ; Tunnel contact
作者部门: [Lu, Qihai ; Wu, Zhiguo ; Yan, Pengxun] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China ; [Lu, Qihai ; Huang, Rong ; Lan, Xiaoling ; Chi, Xiaowei ; Lu, Chao ; Li, Cheng ; Li, Jun] Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China ; [Lu, Qihai ; Han, Genliang ; Yan, Pengxun] Gansu Acad Sci, Inst Sensor Technol, Gansu Key Lab Sensor & Sensor Technol, Lanzhou 730000, Peoples R China
通讯作者: Wu, ZG (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China. ; Li, C (reprint author), Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China.
学科分类: Materials Science; Physics
文章类型: Article
所属项目编号: National Natural Science Foundation of China [61176092, 61474094] ; National Youth Science Foundation of China [11104232] ; National Basic Research Program of China [2012CB933503, 2013CB632103]
所属项目名称: 国家自然科学基金项目 ; 国家重点基础研究发展计划以及国家重大科学研究计划(973计划)
项目资助者: NSFC ; MOST
语种: 英语
DOI: 10.1016/j.matlet.2016.01.087
ISSN号: 0167-577X
WOS记录号: WOS:000370533300041
EI记录号: 20160501881542
IR记录号: WOS:000370533300041
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内容类型: 期刊论文
URI标识: http://ir.lzu.edu.cn/handle/262010/181560
Appears in Collections:物理科学与技术学院_期刊论文

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Recommended Citation:
Lu, QH,Huang, R,Lan, XL,et al. Amazing diffusion depth of ultra-thin hafnium oxide film grown on n-type silicon by lower temperature atomic layer deposition[J]. MATERIALS LETTERS,2016,169:164-167.
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