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兰州大学机构库  > 物理科学与技术学院  > 期刊论文
题名: Structural Phase Transition Effect on Resistive Switching Behavior of MoS2-Polyvinylpyrrolidone Nanocomposites Films for Flexible Memory Devices
作者: Zhang, P; Gao, CX; Xu, BH; Qi, L; Jiang, CJ; Gao, MZ; Xue, DS(薛德胜)
收录类别: SCIE ; EI ; MEDLINE
出版日期: 2016-04-20
刊名: SMALL
卷号: 12, 期号:15, 页码:2077-2084
英文摘要: The 2H phase and 1T phase coexisting in the same molybdenum disulfide (MoS2) nanosheets can influence the electronic properties of the materials. The 1T phase of MoS2 is introduced into the 2H-MoS2 nanosheets by two-step hydrothermal synthetic methods. Two types of nonvolatile memory effects, namely write-once read-many times memory and rewritable memory effect, are observed in the flexible memory devices with the configuration of Al/1T@2H-MoS2-polyvinylpyrrolidone (PVP)/indium tin oxide (ITO)/polyethylene terephthalate (PET) and Al/2H-MoS2-PVP/ITO/PET, respectively. It is observed that structural phase transition in MoS2 nanosheets plays an important role on the resistive switching behaviors of the MoS2-based device. It is hoped that our results can offer a general route for the preparation of various promising nanocomposites based on 2D nanosheets of layered transition metal dichalcogenides for fabricating the high performance and flexible nonvolatile memory devices through regulating the phase structure in the 2D nanosheets.
关键词: hybrid nanomaterials ; memory devices ; MoS2 nanosheets ; polymers ; structural phase transition
作者部门: [Zhang, Peng ; Gao, Cunxu ; Qi, Lin ; Jiang, Changjun ; Gao, Meizhen ; Xue, Desheng] Lanzhou Univ, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Peoples R China ; [Xu, Benhua] Lanzhou Univ, Key Lab Nonferrous Met Chem & Resources Utilizat, Coll Chem & Chem Engn, Lanzhou 730000, Peoples R China ; [Xu, Benhua] Lanzhou Univ, State Key Lab Appl Organ Chem, Coll Chem & Chem Engn, Lanzhou 730000, Peoples R China
通讯作者: Gao, CX ; Xue, DS (reprint author), Lanzhou Univ, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Peoples R China.
学科分类: Chemistry; Science & Technology - Other Topics; Materials Science; Physics
文章类型: Article
所属项目编号: National Basic Research Program of China [2012CB933101] ; National Natural Science Foundation of China [11274147, 51371093]
所属项目名称: 国家自然科学基金项目 ; 国家重点基础研究发展计划以及国家重大科学研究计划(973计划)
项目资助者: NSFC ; MOST
语种: 英语
DOI: 10.1002/smll.201503827
ISSN号: 1613-6810
WOS记录号: WOS:000374334600011
EI记录号: 20161002074853
PM记录号: 26938882
IR记录号: WOS:000374334600011
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内容类型: 期刊论文
URI标识: http://ir.lzu.edu.cn/handle/262010/181563
Appears in Collections:物理科学与技术学院_期刊论文

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Recommended Citation:
Zhang, P,Gao, CX,Xu, BH,et al. Structural Phase Transition Effect on Resistive Switching Behavior of MoS2-Polyvinylpyrrolidone Nanocomposites Films for Flexible Memory Devices[J]. SMALL,2016,12(15):2077-2084.
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