物理科学与技术学院机构知识库

Institutional Repository, School of Physical Sicence and Technology

 

兰州大学机构库  > 物理科学与技术学院  > 期刊论文
题名: Metal/ZnO/MgO/Si/Metal Write-Once-Read-Many-Times Memory
作者: Zhang, Bosen; Hu, Cong; Ren, Tianshuang; Wang, Bo; Qi, Jing; Zhang, Qing; Zheng, Jian-Guo; Xin, Yan; Liu, Jianlin
收录类别: SCIE ; EI
出版日期: 2016-09
刊名: IEEE Transactions on Electron Devices
卷号: 63, 期号:9, 页码:3508-3513
出版者: IEEE
出版地: PISCATAWAY
英文摘要: Write-once-read-many-times memory (WORM) devices were fabricated using ZnO and ZnO/MgO as active layers on Si. Devices fabricated with ZnO show a different memory effect at different current compliances such as WORM at 100 mu A, 500 mu A, and 1 mA, resistive switching (RS) instead of WORM at 5 and 10 mA, and WORM and RS coexisting at 20, 50, and 100 mA, while devices fabricated with ZnO/MgO show WORM only at all current compliances. A few nanometers of MgO layer play a major role in preventing devices from reset at all current compliances because the much lower drift velocity of oxygen vacancy in MgO and accumulation of negatively charged O2- ions at the interface between ZnO and MgO prevent the conducting filaments composed of oxygen vacancies from breaking.
关键词: MgO ; resistive random access memory (RRAM) ; resistive switching (RS) ; write-once-read-many-times memory (WORM) ; ZnO
作者部门: (1) Key Laboratory for Magnetism and Magnetic Materials, School of Physical Science and Technology, Lanzhou University, Lanzhou ; 730000, China ; (2) Quantum Structures Laboratory, Department of Electrical Engineering, University of California at Riverside, Riverside ; CA ; 92521, United States ; (3) Laboratory for Electron and X-Ray Instrumentation, California Institute for Telecommunication and Information Technology, University of California at Irvine, Irvine ; CA ; 92697, United States ; (4) National High Magnetic Field Laboratory, Florida State University, Tallahassee ; FL ; 32310-3706, United States
通讯作者: Qi, J (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China. ; Liu, JL (reprint author), Univ Calif Riverside, Dept Elect Engn, Quantum Struct Lab, Riverside, CA 92521 USA.
学科分类: Engineering; Physics
文章类型: Article
所属项目编号: Science Foundation of China [50902065, 11474137] ; Open Project through the Key Laboratory for Magnetism and Magnetic Materials, Ministry of Education, Lanzhou University [LZUMMM2015012] ; National Science Foundation for Fostering Talents in Basic Research of the National Natural Science Foundation of China [041105, 041106] ; StarNet Center on Function Accelerated nano Material Engineering ; Defense Microelectronics Activity [H94003-10-2-1003] ; Transmission Electron Microscopy through the Florida State University ; National Science Foundation within the National High Magnetic Field Laboratory, FL, USA [DMR-1157490]
所属项目名称: 国家自然科学基金项目 ; 国家基础科学人才培养基金项目
项目资助者: NSFC ; LZU
语种: 英语
DOI: 10.1109/TED.2016.2589272
ISSN号: 0018-9383
WOS记录号: WOS:000384574400020
EI记录号: 20163402722635
IR记录号: 20163402722635
第一机构:
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.lzu.edu.cn/handle/262010/181669
Appears in Collections:物理科学与技术学院_期刊论文

Files in This Item:

There are no files associated with this item.


Recommended Citation:
Zhang, Bosen,Hu, Cong,Ren, Tianshuang,et al. Metal/ZnO/MgO/Si/Metal Write-Once-Read-Many-Times Memory[J]. IEEE Transactions on Electron Devices,2016,63(9):3508-3513.
Service
Recommend this item
Sava as my favorate item
Show this item's statistics
Export Endnote File
Altmetrics Score
 
Google Scholar
Similar articles in Google Scholar
[Zhang, Bosen]'s Articles
[Hu, Cong]'s Articles
[Ren, Tianshuang]'s Articles
CSDL cross search
Similar articles in CSDL Cross Search
[Zhang, Bosen]‘s Articles
[Hu, Cong]‘s Articles
[Ren, Tianshuang]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
Add to CiteULike Add to Connotea Add to Del.icio.us Add to Digg Add to Reddit
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!
Email:
Passwd
验 证:
换一张
Have you forgotten your password? Log In
Copyright © 2007-2017  兰州大学 - Feedback
Powered by CSpace