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题名: Fabrication technology and characterization of PTCDA/p-Si photo-electronic detector
作者: Li, Xia; Zhang, Shengdong; Zhang, Fujia; Wang, Jing; Zhang, HL(张浩力)
收录类别: EI
出版日期: 2011
会议名称: 2011 Symposium on Photonics and Optoelectronics, SOPO 2011
会议日期: May 16, 2011 - May 18, 2011
会议地点: Wuhan, China
英文摘要: The fabrication technology and characterization of PTCDA/p-Si photo-electronic detectors are studied in this paper. The results indicate that Al, in comparison to Au, is preferably suitable for use as the cathode materials of the PTCDA/p-Si photo-electronic detectors. It is also found that the performance of the detectors depends very strongly on the purity of PTCDA. The higher purity of the PTCDA leads to smaller dark current the detectors have, the larger photoelectric current they have. The higher purity of the PTCDA leads to the better I-V characterization of the detector. And the smaller opposite dark current the detectors have, the smaller opposite photoelectric current they have. © 2011 IEEE.
关键词: Detectors ; Cathodes ; Characterization ; Optoelectronic devices ; Photoelectricity ; Photonics ; Silicon ; Cathode materials ; Fabrication Technologies ; I-V ; IV characterization ; OIHJ ; Photo-electric detector ; Photoelectric current ; PTCDA
作者部门: (1) Peking University, Shenzhen Graduated School, Shenzhen 518055, China ; (2) Institute of Microelectronics, College of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China ; (3) College of Chemistry and Chemical Engineering, State Key laboratory of Applied Organic Chemistry, Lanzhou University, Lanzhou 730000, China
通讯作者: Zhang, F.
学科分类: Materials Science;Optical Communication Equipment; Electronic and Thermionic Materials;Electric Components
会议录: 2011 Symposium on Photonics and Optoelectronics, SOPO 2011
出版者: IEEE
出版地: Piscataway
语种: 英语
DOI: 10.1109/SOPO.2011.5780671
EI记录号: 20112514083164
IR记录号: 20112514083164
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内容类型: 会议论文
URI标识: http://ir.lzu.edu.cn/handle/262010/184817
Appears in Collections:物理科学与技术学院_会议论文

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Recommended Citation:
Li, Xia,Zhang, Shengdong,Zhang, Fujia,et al. Fabrication technology and characterization of PTCDA/p-Si photo-electronic detector[C]. 见:2011 Symposium on Photonics and Optoelectronics, SOPO 2011. Wuhan, China. May 16, 2011 - May 18, 2011.
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