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题名: Large magnetocapacitance in p-n junction
作者: Cao, Y; Wang, T; Yang, DZ; Xue, DS
收录类别: CPCI-S
出版日期: 2016
会议名称: 7th IEEE International Nanoelectronics Conference
会议日期: MAY 09-11, 2016
会议地点: Chengdu, PEOPLES R CHINA
英文摘要: We report a pronounced change of capacitance in silicon based p-n junction by manipulating the space charge region of the p-n junction under a magnetic field. By measuring the charge and discharge curves of p-n junction with a pulsed voltage, we find that with increasing the magnetic field the p-n junction resistance increases sharply, while the value of capacitance is obviously suppressed. Our results reveal that the magnetocapacitance and the magnetoresistance in p-n junction both arise from the redistribution of the space charge region under the magnetic field and give a new way for the development of future magnetic sensors with non-magnetic p-n junctions.
关键词: p-n junction ; capacitance ; the space charge region ; magnetoresistance
作者部门: [Cao, Yang ; Wang, Tao ; Yang, Dezheng ; Xue, Desheng] Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China
通讯作者: Yang, DZ ; Xue, DS (reprint author), Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China.
学科分类: Engineering; Science & Technology - Other Topics
会议录: 7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016
出版者: IEEE
出版地: NEW YORK
语种: 英语
ISSN号: 2159-3523
WOS记录号: WOS:000386737900142
IR记录号: WOS:000386737900142
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内容类型: 会议论文
URI标识: http://ir.lzu.edu.cn/handle/262010/189625
Appears in Collections:物理科学与技术学院_会议论文

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Recommended Citation:
Cao, Y,Wang, T,Yang, DZ,et al. Large magnetocapacitance in p-n junction[C]. 见:7th IEEE International Nanoelectronics Conference. Chengdu, PEOPLES R CHINA. MAY 09-11, 2016.
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