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题名: Temperature dependence of the ordinary Hall effect in ferrimagnetic Co83Gd17 thin films
作者: Chen, SW; Han, JW; Wang, T; Yang, DZ; Xue, DS
收录类别: CPCI-S
出版日期: 2016
会议名称: 7th IEEE International Nanoelectronics Conference
会议日期: MAY 09-11, 2016
会议地点: Chengdu, PEOPLES R CHINA
英文摘要: We systematically study the Hall effects of ferrimagnetic Co83Gd17 thin films with the thicknesses t from 5 to 160 nm. We find that the ordinary Hall coefficient is significantly affected by thickness and temperature. With increasing temperature from 10 to 300 K, for large thickness i.e. t = 160 nm the value of ordinary Hall coefficient is always positive and gradually increases. However, for small thickness i.e. t = 10 nm the value of ordinary Hall coefficient is suddenly changed sign from +5.4x10(-5) to-2.6x10(-3) cm(3)/C at 140 K By analyzing the resistivity of Co83Gd17 as a function of temperature, the ordinary Hall Effect with respect to the thickness can be explained by the influence of boundary scattering on the relaxation rate of carriers and different dominant carriers with the changing temperature in the amorphous films.
关键词: Hall Effect ; Ferrimagnetic
作者部门: [Chen, Shiwei ; Han, Jianwei ; Wang, Tao ; Yang, Dezheng ; Xue, Desheng] Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China
通讯作者: Yang, DZ (reprint author), Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China.
学科分类: Engineering; Science & Technology - Other Topics
会议录: 7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016
出版者: IEEE
出版地: NEW YORK
语种: 英语
ISSN号: 2159-3523
WOS记录号: WOS:000386737900145
IR记录号: WOS:000386737900145
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内容类型: 会议论文
URI标识: http://ir.lzu.edu.cn/handle/262010/189626
Appears in Collections:物理科学与技术学院_会议论文

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Recommended Citation:
Chen, SW,Han, JW,Wang, T,et al. Temperature dependence of the ordinary Hall effect in ferrimagnetic Co83Gd17 thin films[C]. 见:7th IEEE International Nanoelectronics Conference. Chengdu, PEOPLES R CHINA. MAY 09-11, 2016.
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