兰州大学机构库
Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer
Zhang, Wen-Ting1,2; Wang, Fen-Xia1; Li, Yu-Miao1; Guo, Xiao-Xing1; Yang, JH(杨建红)1
Indexed BySCI
2019-08
Source PublicationCHINESE PHYSICS B
Volume28Issue:8
AbstractIn this study, we present an organic field-effect transistor floating-gate memory using polysilicon (poly-Si) as a charge trapping layer. The memory device is fabricated on a N+-Si/SiO2 substrate. Poly-Si, polymethylmethacrylate, and pentacene are used as a floating-gate layer, tunneling layer, and active layer, respectively. The device shows bidirectional storage characteristics under the action of programming/erasing (P/E) operation due to the supplied electrons and holes in the channel and the bidirectional charge trapping characteristic of the poly-Si floating-gate. The carrier mobility and switching current ratio (I-on/I-off ratio) of the device with a tunneling layer thickness of 85 nm are 0.01 cm(2) V(-1)s(-1) and 10(2), respectively. A large memory window of 9.28 V can be obtained under a P/E voltage of +/- 60 V.
Keywordorganic floating-gate memory polysilicon floating-gate memory window
DOI10.1088/1674-1056/28/8/086801
ISSN1674-1056
Language英语
Original Document TypeArticle
WOS Research AreaPhysics
WOS SubjectPhysics, Multidisciplinary
WOS IDWOS:000481704200001
PublisherIOP PUBLISHING LTD
Citation statistics
Document Type期刊论文
Identifierhttp://ir.lzu.edu.cn/handle/262010/281988
Collection兰州大学
Corresponding AuthorYang, Jian-Hong
Affiliation1.Lanzhou Univ, Inst Microelect, Lanzhou 730000, Gansu, Peoples R China
2.Lanzhou Jiaotong Univ, Sch Elect & Informat Engn, Lanzhou 730070, Gansu, Peoples R China
First Author AffilicationSchool of Physical Sicence and Technology
Corresponding Author AffilicationSchool of Physical Sicence and Technology
Recommended Citation
GB/T 7714
Zhang, Wen-Ting,Wang, Fen-Xia,Li, Yu-Miao,et al. Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer[J]. CHINESE PHYSICS B,2019,28(8).
APA Zhang, Wen-Ting,Wang, Fen-Xia,Li, Yu-Miao,Guo, Xiao-Xing,&Yang, Jian-Hong.(2019).Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer.CHINESE PHYSICS B,28(8).
MLA Zhang, Wen-Ting,et al."Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer".CHINESE PHYSICS B 28.8(2019).
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