兰州大学机构库 >物理科学与技术学院
Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy
Xing, Shu'an1; Zhao, Guijuan1; Wang, Jie1; Xu, Yan1; Ma, Zhixin1; Li, Xunshuan1,2; Yang, WG(杨文革)1; Liu, GP(刘贵鹏)1,2; Yang, JH(杨建红)1
Indexed BySCIE
2020-09-05
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
ISSN0925-8388
Volume834
AbstractThe two-dimensional h-BN/MoS2 van der Waals heterojunction, was fabricated, and is stacked by h-BN and MoS2 monolayers, which are combined together by van der Waals forces. We have measured the valence band offset (VBO) of h-BN/MoS2 heterojunction by X-ray photoelectron spectroscopy (XPS) experimentally. The measurement result of VBO is 0.24 +/- 0.15 eV and the conduction band offset (CBO) is calculated to be 3.99 +/- 0.15 eV, revealing a type-I band alignment of h-BN/MoS2 heterojunction. Anderson's affinity rule has verified the accuracy of the measurement result of VBO. (C) 2020 Elsevier B.V. All rights reserved.
Keywordvan der Waals heterojunction Molybdenum disulfide Hexagonal boron nitride Band alignment X-ray photoelectron spectroscopy
DOI10.1016/j.jallcom.2020.155108
Language英语
Funding ProjectNational Natural Science Foundation of China[61874108] ; Gansu Province Natural Science Foundation[18JR3RA285] ; Open Project of Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education of Lanzhou University[LZUMMM2020004] ; Special Funding for Open and Shared Large-Scale Instruments and Equipments of Lanzhou University[LZU-GXJJ-2019C017]
WOS Research AreaChemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectChemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000534495600007
PublisherELSEVIER SCIENCE SA
Original Document TypeArticle
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.lzu.edu.cn/handle/262010/395538
Collection物理科学与技术学院
Corresponding AuthorZhao, Guijuan
Affiliation1.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China
2.Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Gansu, Peoples R China
First Author AffilicationSchool of Physical Sicence and Technology
Corresponding Author AffilicationSchool of Physical Sicence and Technology
Recommended Citation
GB/T 7714
Xing, Shu'an,Zhao, Guijuan,Wang, Jie,et al. Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2020,834.
APA Xing, Shu'an.,Zhao, Guijuan.,Wang, Jie.,Xu, Yan.,Ma, Zhixin.,...&Yang, Jianhong.(2020).Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy.JOURNAL OF ALLOYS AND COMPOUNDS,834.
MLA Xing, Shu'an,et al."Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy".JOURNAL OF ALLOYS AND COMPOUNDS 834(2020).
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Altmetrics Score
Google Scholar
Similar articles in Google Scholar
[Xing, Shu'an]'s Articles
[Zhao, Guijuan]'s Articles
[Wang, Jie]'s Articles
Baidu academic
Similar articles in Baidu academic
[Xing, Shu'an]'s Articles
[Zhao, Guijuan]'s Articles
[Wang, Jie]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Xing, Shu'an]'s Articles
[Zhao, Guijuan]'s Articles
[Wang, Jie]'s Articles
Terms of Use
No data!
Social Bookmark/Share
No comment.
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.