| Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy | |
Xing, Shu'an1; Zhao, Guijuan1; Wang, J(王杰)1 ; Xu, Yan1; Ma, Zhixin1; Li, Xunshuan1,2; Yang, WG(杨文革)1; Liu, GP(刘贵鹏)1,2; Yang, JH(杨建红)1 | |
| 2020-09-05 | |
| Source Publication | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| ISSN | 0925-8388 |
| Volume | 834 |
| Abstract | The two-dimensional h-BN/MoS2 van der Waals heterojunction, was fabricated, and is stacked by h-BN and MoS2 monolayers, which are combined together by van der Waals forces. We have measured the valence band offset (VBO) of h-BN/MoS2 heterojunction by X-ray photoelectron spectroscopy (XPS) experimentally. The measurement result of VBO is 0.24 +/- 0.15 eV and the conduction band offset (CBO) is calculated to be 3.99 +/- 0.15 eV, revealing a type-I band alignment of h-BN/MoS2 heterojunction. Anderson's affinity rule has verified the accuracy of the measurement result of VBO. (C) 2020 Elsevier B.V. All rights reserved. |
| Keyword | van der Waals heterojunction Molybdenum disulfide Hexagonal boron nitride Band alignment X-ray photoelectron spectroscopy |
| DOI | 10.1016/j.jallcom.2020.155108 |
| Indexed By | SCIE |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China[61874108] ; Gansu Province Natural Science Foundation[18JR3RA285] ; Open Project of Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education of Lanzhou University[LZUMMM2020004] ; Special Funding for Open and Shared Large-Scale Instruments and Equipments of Lanzhou University[LZU-GXJJ-2019C017] |
| WOS Research Area | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS Subject | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| WOS ID | WOS:000534495600007 |
| Publisher | ELSEVIER SCIENCE SA |
| Original Document Type | Article |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.lzu.edu.cn/handle/262010/395538 |
| Collection | 物理科学与技术学院 资源环境学院 |
| Corresponding Author | Zhao, Guijuan |
| Affiliation | 1.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China 2.Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Gansu, Peoples R China |
| First Author Affilication | School of Physical Sicence and Technology |
| Corresponding Author Affilication | School of Physical Sicence and Technology |
| Recommended Citation GB/T 7714 | Xing, Shu'an,Zhao, Guijuan,Wang, Jie,et al. Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2020,834. |
| APA | Xing, Shu'an.,Zhao, Guijuan.,Wang, Jie.,Xu, Yan.,Ma, Zhixin.,...&Yang, Jianhong.(2020).Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy.JOURNAL OF ALLOYS AND COMPOUNDS,834. |
| MLA | Xing, Shu'an,et al."Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy".JOURNAL OF ALLOYS AND COMPOUNDS 834(2020). |
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