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Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy
Xing, Shu'an ; Zhao, Guijuan ; Wang, Jie ; Xu, Yan ; Ma, Zhixin ; Li, Xunshuan ; Yang, Wenge ; Liu, Guipeng ; Yang, Jianhong
2020-09-05
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
AbstractThe two-dimensional h-BN/MoS2 van der Waals heterojunction, was fabricated, and is stacked by h-BN and MoS2 monolayers, which are combined together by van der Waals forces. We have measured the valence band offset (VBO) of h-BN/MoS2 heterojunction by X-ray photoelectron spectroscopy (XPS) experimentally. The measurement result of VBO is 0.24 +/- 0.15 eV and the conduction band offset (CBO) is calculated to be 3.99 +/- 0.15 eV, revealing a type-I band alignment of h-BN/MoS2 heterojunction. Anderson's affinity rule has verified the accuracy of the measurement result of VBO. (C) 2020 Elsevier B.V. All rights reserved.
PublisherELSEVIER SCIENCE SA
Document Type期刊论文
Identifierhttp://ir.lzu.edu.cn/handle/262010/395603
Collection兰州大学
Recommended Citation
GB/T 7714
Xing, Shu'an,Zhao, Guijuan,Wang, Jie,et al. Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2020.
APA Xing, Shu'an.,Zhao, Guijuan.,Wang, Jie.,Xu, Yan.,Ma, Zhixin.,...&Yang, Jianhong.(2020).Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy.JOURNAL OF ALLOYS AND COMPOUNDS.
MLA Xing, Shu'an,et al."Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy".JOURNAL OF ALLOYS AND COMPOUNDS (2020).
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