| Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy |
| Xing, Shu'an
; Zhao, Guijuan
; Wang, Jie
; Xu, Yan
; Ma, Zhixin
; Li, Xunshuan
; Yang, Wenge
; Liu, Guipeng
; Yang, Jianhong
|
| 2020-09-05
|
| Source Publication | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| Abstract | The two-dimensional h-BN/MoS2 van der Waals heterojunction, was fabricated, and is stacked by h-BN and MoS2 monolayers, which are combined together by van der Waals forces. We have measured the valence band offset (VBO) of h-BN/MoS2 heterojunction by X-ray photoelectron spectroscopy (XPS) experimentally. The measurement result of VBO is 0.24 +/- 0.15 eV and the conduction band offset (CBO) is calculated to be 3.99 +/- 0.15 eV, revealing a type-I band alignment of h-BN/MoS2 heterojunction. Anderson's affinity rule has verified the accuracy of the measurement result of VBO. (C) 2020 Elsevier B.V. All rights reserved. |
| Publisher | ELSEVIER SCIENCE SA
|
| Document Type | 期刊论文
|
| Identifier | http://ir.lzu.edu.cn/handle/262010/395603
|
| Collection | 兰州大学
|
Recommended Citation
GB/T 7714 |
Xing, Shu'an,Zhao, Guijuan,Wang, Jie,et al. Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy[J].
JOURNAL OF ALLOYS AND COMPOUNDS,2020.
|
| APA |
Xing, Shu'an.,Zhao, Guijuan.,Wang, Jie.,Xu, Yan.,Ma, Zhixin.,...&Yang, Jianhong.(2020).Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy.JOURNAL OF ALLOYS AND COMPOUNDS.
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| MLA |
Xing, Shu'an,et al."Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy".JOURNAL OF ALLOYS AND COMPOUNDS (2020).
|
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