兰州大学机构库 >物理科学与技术学院
Effect of proton irradiation on the mobility of two-dimensional electron in AlGaN/AlN/GaN high electron mobility transistors at low temperature
Tang, Jinjin; Liu, GP(刘贵鹏); Zhao, Guijuan; Xing, Shu'An; Malik, Salamat Ali
2020
Source PublicationJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
ISSN21662754
Volume38Issue:2
AbstractThe authors simulated the damage caused by proton irradiation to the device and analyzed the effect of proton irradiation on two-dimensional electron mobility taking various scattering mechanisms into account. Proton-irradiation simulation of the AlGaN/AlN/GaN HEMT device was carried out to obtain the irradiation simulation results by using SRIM software. Then, considering various scattering mechanisms, the authors established a model to simulate two-dimensional electron mobility under different proton energy and irradiation doses at low temperature. The theoretical data show that proton irradiation significantly decreased the mobility of a two-dimensional electron in a GaN-based HEMT at low temperature.
© 2020 Author(s).
DOI10.1116/1.5134840
Indexed ByEI
PublisherAVS Science and Technology Society
EI Accession Number20200608127778
EI KeywordsAluminum gallium nitride ; Computer software ; Electron mobility ; Electrons ; Gallium nitride ; III-V semiconductors ; Proton irradiation ; Radiation ; Temperature
EI Classification NumberThermodynamics:641.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Computer Software, Data Handling and Applications:723 ; Inorganic Compounds:804.2
Original Document TypeJournal article (JA)
Citation statistics
Document Type期刊论文
Identifierhttp://ir.lzu.edu.cn/handle/262010/405036
Collection物理科学与技术学院
Corresponding AuthorLiu, Guipeng
AffiliationSchool of Physical Science and Technology, Lanzhou University, Lanzhou; 730000, China
First Author AffilicationLanzhou University
Corresponding Author AffilicationLanzhou University
Recommended Citation
GB/T 7714
Tang, Jinjin,Liu, Guipeng,Zhao, Guijuan,et al. Effect of proton irradiation on the mobility of two-dimensional electron in AlGaN/AlN/GaN high electron mobility transistors at low temperature[J]. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics,2020,38(2).
APA Tang, Jinjin,Liu, Guipeng,Zhao, Guijuan,Xing, Shu'An,&Malik, Salamat Ali.(2020).Effect of proton irradiation on the mobility of two-dimensional electron in AlGaN/AlN/GaN high electron mobility transistors at low temperature.Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics,38(2).
MLA Tang, Jinjin,et al."Effect of proton irradiation on the mobility of two-dimensional electron in AlGaN/AlN/GaN high electron mobility transistors at low temperature".Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics 38.2(2020).
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