兰州大学机构库 >信息科学与工程学院
Study of the GaAs/SiH van der Waals type-II heterostructure: a high efficiency photocatalyst promoted by a built-in electric field
Han, Shuaicheng; Li, YE(李月娥); Chai, Jian; Wang, Z(王忠)
2020
Source PublicationPhysical Chemistry Chemical Physics
ISSN1463-9076
Volume22Issue:16Pages:8565-8571
AbstractThe application of two-dimensional (2D) materials to construct van der Waals (vdW) heterostructures in photocatalysis has attracted extensive attention recently. However, exploration of ways to enhance the photocatalytic efficiency at the interface is relatively limited. In this study, using density functional theory, we prove that GaAs/SiH formed a standard type-II heterojunction with a 2.17 eV direct band gap. The charge transfer across the interface was investigated by the charge density difference and Bader charge analysis. Due to the difference in the work functions, the relative positions of the conduction band (CB) and valence band (VB) of GaAs and SiH present a significant change after the heterostructure is formed. Furthermore, the built-in electric field, formed by charge transfer at the interface of the GaAs/SiH heterojunction, promotes photogenerated carrier separation. The band edge position and the absorption spectrum were calculated and the photocatalytic performance of the GaAs/SiH vdW heterostructure in the visible light region was evaluated. Strong absorption is observed, which predicts promising application in photonic detection across the visible and the UV region. Excitingly, GaAs/SiH has a significant advantage for improving the photocatalytic efficiency under visible light irradiation. Our work can provide guidance for the design of other highly efficiency heterostructures.
© the Owner Societies 2020.
DOI10.1039/d0cp00139b
Indexed ByEI
Funding ProjectNational Natural Science Foundation of China[61405083] ; Fundamental Research Funds for the Central Universities[lzujbky-2018-129]
PublisherRoyal Society of Chemistry
EI Accession Number20202008647275
EI KeywordsAbsorption spectroscopy ; Charge transfer ; Efficiency ; Electric fields ; Energy gap ; Gallium arsenide ; Heterojunctions ; III-V semiconductors ; Light ; Photocatalytic activity ; Semiconducting gallium ; Silicon ; Van der Waals forces
EI Classification NumberNonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Electricity: Basic Concepts and Phenomena:701.1 ; Single Element Semiconducting Materials:712.1.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Physical Chemistry:801.4 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Production Engineering:913.1 ; Probability Theory:922.1
Original Document TypeJournal article (JA)
Citation statistics
Cited Times:7[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.lzu.edu.cn/handle/262010/405055
Collection信息科学与工程学院
Corresponding AuthorLi, Yuee
AffiliationSchool of Information Science and Engineering, Lanzhou University, China
First Author AffilicationSchool of Information Science and Engineering
Corresponding Author AffilicationSchool of Information Science and Engineering
Recommended Citation
GB/T 7714
Han, Shuaicheng,Li, Yuee,Chai, Jian,et al. Study of the GaAs/SiH van der Waals type-II heterostructure: a high efficiency photocatalyst promoted by a built-in electric field[J]. Physical Chemistry Chemical Physics,2020,22(16):8565-8571.
APA Han, Shuaicheng,Li, Yuee,Chai, Jian,&Wang, Zhong.(2020).Study of the GaAs/SiH van der Waals type-II heterostructure: a high efficiency photocatalyst promoted by a built-in electric field.Physical Chemistry Chemical Physics,22(16),8565-8571.
MLA Han, Shuaicheng,et al."Study of the GaAs/SiH van der Waals type-II heterostructure: a high efficiency photocatalyst promoted by a built-in electric field".Physical Chemistry Chemical Physics 22.16(2020):8565-8571.
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