|Valence band offset of ReS2/BN heterojunction measured by X-ray photoelectron spectroscopy|
; Yang, Wenge
; Xing, Shu'an
; Zhao, Guijuan
; Li, Xunshuan
; Liu, Guipeng
; Yang, Jianhong
|Source Publication||PHYSICS LETTERS A
|Abstract||We report the band alignment parameters of ReS2/BN van der Waals heterojunction where the ReS2 and BN monolayer are grown by chemical vapor deposition (CVD). The determination of the band alignment has been carried out by X-ray photoelectron spectroscopy (XPS). With a type-I band alignment, the valence band offset (VBO) and conduction band offset (CEO) values are measured to be 2.79 +/- 0.24 eV and 1.76 +/- 0.24 eV, respectively. The results can offer a reference for the electric and photoelectric devices based on the ReS2/EN heterojunction. In addition, the large VEO and CEO of this heterojunction make it a good choice for substrates and gate dielectrics of complementary metal oxide semiconductor (CMOS) transistors. (C) 2021 Elsevier B.V. All rights reserved.|
Huang, Heyuan,Yang, Wenge,Xing, Shu'an,et al. Valence band offset of ReS2/BN heterojunction measured by X-ray photoelectron spectroscopy[J].
PHYSICS LETTERS A,2021.
Huang, Heyuan.,Yang, Wenge.,Xing, Shu'an.,Zhao, Guijuan.,Li, Xunshuan.,...&Yang, Jianhong.(2021).Valence band offset of ReS2/BN heterojunction measured by X-ray photoelectron spectroscopy.PHYSICS LETTERS A.
Huang, Heyuan,et al."Valence band offset of ReS2/BN heterojunction measured by X-ray photoelectron spectroscopy".PHYSICS LETTERS A (2021).
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