兰州大学机构库

Browse/Search Results:  1-10 of 12 Help

Selected(0)Clear Items/Page:    Sort:
Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 卷号: 834
Authors:  Xing, Shu'an;  Zhao, Guijuan;  Wang, Jie;  Xu, Yan;  Ma, Zhixin;  Li, Xunshuan;  Yang, WG(杨文革);  Liu, GP(刘贵鹏);  Yang, JH(杨建红)
Favorite  |  View/Download:90/0  |  Submit date:2020/06/16
van der Waals heterojunction  Molybdenum disulfide  Hexagonal boron nitride  Band alignment  X-ray photoelectron spectroscopy  
Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2020
Xing, Shu'an; Zhao, Guijuan; Wang, Jie; Xu, Yan; Ma, Zhixin; Li, Xunshuan; Yang, Wenge; Liu, Guipeng; Yang, Jianhong
Favorite  |  View/Download:32/0
Study of the GaAs/SiH van der Waals type-II heterostructure: a high efficiency photocatalyst promoted by a built-in electric field 期刊论文
Physical Chemistry Chemical Physics, 2020, 卷号: 22, 期号: 16, 页码: 8565-8571
Authors:  Han, Shuaicheng;  Li, YE(李月娥);  Chai, Jian;  Wang, Z(王忠)
Favorite  |  View/Download:3/0  |  Submit date:2020/07/07
AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity 期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2019, 卷号: 29, 期号: 12
Authors:  Wu, Feng;  Xia, Hui;  Sun, Haiding;  Zhang, Junwei;  Gong, Fan;  Wang, Zhen;  Chen, Long;  Wang, Peng;  Long, Mingsheng;  Wu, Xing...Wu, Feng;  Xia, Hui;  Sun, Haiding;  Zhang, Junwei;  Gong, Fan;  Wang, Zhen;  Chen, Long;  Wang, Peng;  Long, Mingsheng;  Wu, Xing;  Wang, Jianlu;  Ren, Wencai;  Chen, Xiaoshuang;  Lu, Wei;  Hu, Weida
Favorite  |  View/Download:2/0  |  Submit date:2019/10/18
backward diodes  photodiodes  rectification  tunneling  van der Waals heterojunctions  
二维过渡金属硫族化合物的电子器件制备 学位论文
学士, 兰州: 兰州大学, 2018
Authors:  孟琬青
Favorite  |  View/Download:14/0  |  Submit date:2019/01/18
光电探测器  二维过渡金属硫化物  二硫化钼  
三硝基芴酮的电荷转移复合物的制备及其导电性质的研究 学位论文
学士, 兰州: 兰州大学, 2016
Authors:  陈子朕
Favorite  |  View/Download:3/0  |  Submit date:2019/01/18
电荷转移复合物  分子电子学  STM断裂结  电导  
Indirect-direct band gap transition through electric tuning in bilayer MoS2 期刊论文
JOURNAL OF CHEMICAL PHYSICS, 2014, 卷号: 140, 期号: 17, 页码: -
Authors:  Zhang, ZY(张稚雅);  Si, MS(司明苏);  Wang, YH(王育华);  Gao, XP(高秀平);  Sung, D;  Hong, S;  He, JJ;  Si, MS (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China.
Adobe PDF(1110Kb)  |  Favorite  |  View/Download:140/0  |  Submit date:2015/05/25
Composition and architecture-engineered Au-SnO2/GNs-SWCNTs nanocomposites as ultrasensitive and robust electrochemical sensor for antioxidant additives in foods 期刊论文
SENSORS AND ACTUATORS B-CHEMICAL, 2014, 卷号: 203, 页码: 926-934
Authors:  Du, YL(杜永令);  Gao, X;  Ye, XL;  Zheng, ZX;  Feng, QL;  Wang, CM(王春明);  Wu, KF;  Du, YL (reprint author), Lanzhou Univ, Coll Chem & Chem Engn, Lanzhou 730000, Gansu, Peoples R China.
Adobe PDF(2741Kb)  |  Favorite  |  View/Download:96/0  |  Submit date:2015/05/22
TBHQ detection  GNs-SWCNTs  Semiconductor  Nanocomposite  Modified electrode  Electrochemical sensor  
Indirect-direct band gap transition by van der Waals interaction engineering in MoS2/WS2 bilayer heterojunction 会议论文
International Conference on Machinery, Electronics and Control Simulation (ICMECS)/Applied Mechanics and Materials, Weihai, Shandong Province, China, September 27, 2014 - September 28, 2014
Authors:  Cao, HN;  Zhang, ZY(张稚雅);  Si, MS(司明苏);  Zhang, F;  Wang, YH(王育华);  Cao, HN (reprint author), Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China.
Favorite  |  View/Download:205/0  |  Submit date:2015/07/31
Indirect-direct band gap transition  MoS2/WS2 heterojunction  Van der Waals interaction engineering  First principles calculations  
Indirect-direct band gap transition by van der Waals interaction engineering in MoS2/WS2 bilayer heterojunction 会议论文
International Conference on Machinery, Electronics and Control Simulation (ICMECS)/Applied Mechanics and Materials, Cao, HN,Zhang, ZY,Si, MS,et al. Indirect-direct band gap transition by van der Waals interaction engineering in MoS2/WS2 bilayer heterojunction[C]. 见:International Conference Machinery, Electronics and Control Simulation, ICMECS 2014. Weihai, Shandong Province, China. September 27, 2014 - September 28, 2014., Cao, HN,Zhang, ZY,Si, MS,et al. Indirect-direct band gap transition by van der Waals interaction engineering in MoS2/WS2 bilayer heterojunction[C]. 见:International Conference Machinery, Electronics and Control Simulation, ICMECS 2014. Weihai, Shandong Province, China. September 27, 2014 - September 28, 2014.
Cao, HN; Zhang, ZY; Si, MS; Zhang, F; Wang, YH; Cao, HN (reprint author), Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China.
Favorite  |  View/Download:1/0