兰州大学机构库
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Resistive switching behaviors and mechanisms of HfS2 film memory devices studied by experiments and density functional theory calculations 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 6
Authors:  Li, Naifeng;  Wang, Yue;  Sun, Haifeng;  Hu, Junjie;  Zheng, Maoyuan;  Ye, Sihao;  Wang, Qi;  Li, Yingtao;  He, Deyan;  Wang, Jiatai...Li, Naifeng;  Wang, Yue;  Sun, Haifeng;  Hu, Junjie;  Zheng, Maoyuan;  Ye, Sihao;  Wang, Qi;  Li, Yingtao;  He, Deyan;  Wang, Jiatai;  Zhang, Guangan;  Qi, J(祁菁)
Favorite  |  View/Download:23/0  |  Submit date:2020/08/06
The effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory 期刊论文
Applied Physics Letters, 2017, 卷号: 110, 期号: 7
Authors:  Hu, Cong;  Wang, Qi;  Bai, Shuai;  Xu, Min;  He, Deyan;  Lyu, Deyuan;  Qi, J(祁菁)
Favorite  |  View/Download:119/0  |  Submit date:2017/05/09
Enhanced field emission from ZnO nanowire arrays utilizing MgO buffer between seed layer and silicon substrate 期刊论文
Applied Surface Science, 2016, 卷号: 387, 页码: 103-108
Authors:  Chen, Si;  Chen, Jiangtao;  Liu, Jianlin;  Qi, J(祁菁);  Wang, YH(王育华);  Qi, J (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Peoples R China.;  Wang, Y (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Dept Mat Sci, Lanzhou 730000, Peoples R China.
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ZnO nanowire arrays  Field emission  MgO buffer layer  Electron transport  Vertically aligned  
Metal/ZnO/MgO/Si/Metal Write-Once-Read-Many-Times Memory 期刊论文
IEEE Transactions on Electron Devices, 2016, 卷号: 63, 期号: 9, 页码: 3508-3513
Authors:  Zhang, Bosen;  Hu, Cong;  Ren, Tianshuang;  Wang, Bo;  Qi, J(祁菁);  Zhang, Qing;  Zheng, Jian-Guo;  Xin, Yan;  Liu, Jianlin;  Qi, J (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China....Zhang, Bosen;  Hu, Cong;  Ren, Tianshuang;  Wang, Bo;  Qi, J(祁菁);  Zhang, Qing;  Zheng, Jian-Guo;  Xin, Yan;  Liu, Jianlin;  Qi, J (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China.;  Liu, JL (reprint author), Univ Calif Riverside, Dept Elect Engn, Quantum Struct Lab, Riverside, CA 92521 USA.
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MgO  resistive random access memory (RRAM)  resistive switching (RS)  write-once-read-many-times memory (WORM)  ZnO  
Enhanced field emission from ZnO nanowire arrays utilizing MgO buffer between seed layer and silicon substrate 期刊论文
Applied Surface Science, 2016, 卷号: 387, 页码: 103-108
Authors:  Chen, Si;  Chen, Jiangtao;  Liu, Jianlin;  Qi, J(祁菁);  Wang, YH(王育华)
Favorite  |  View/Download:5/0  |  Submit date:2019/06/04
The effect of high-temperature oxygen annealing on field emission from ZnO nanowire arrays 期刊论文
APPLIED SURFACE SCIENCE, 2015, 卷号: 357, 页码: 413-416
Authors:  Chen, S;  Chen, JT;  Liu, JL;  Qi, J(祁菁);  Wang, YH(王育华);  Qi, J (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, MOE, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China.
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ZnO  Nanowire arrays  Oxygen annealing  Field emission  Oxygen vacancy  
Resistive switching in Ga- and Sb-doped ZnO single nanowire devices 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2015, 卷号: 3, 期号: 45, 页码: 11881-11885
Authors:  Wang, B;  Ren, TS;  Chen, S;  Zhang, BS;  Zhang, RF;  Qi, J(祁菁);  Chu, S;  Huang, J;  Liu, JL;  Qi, J (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Dept Phys, Key Lab Magnetism & Magnet Mat,MOE, Lanzhou 730000, Peoples R China....Wang, B;  Ren, TS;  Chen, S;  Zhang, BS;  Zhang, RF;  Qi, J(祁菁);  Chu, S;  Huang, J;  Liu, JL;  Qi, J (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Dept Phys, Key Lab Magnetism & Magnet Mat,MOE, Lanzhou 730000, Peoples R China.
Favorite  |  View/Download:43/0  |  Submit date:2017/01/13
Ferromagnetism in ultrathin MoS2 nanosheets: from amorphous to crystalline 期刊论文
NANOSCALE RESEARCH LETTERS, 2014, 卷号: 9, 页码: -
Authors:  Zhang, RF;  Li, Y;  Qi, J(祁菁);  Gao, DQ(高大强);  Qi, J (reprint author), Lanzhou Univ, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Peoples R China.
Favorite  |  View/Download:72/0  |  Submit date:2016/03/29
Room temperature ferromagnetism in Zn0.99La0.01O and pure ZnO nanoparticles 期刊论文
MATERIALS CHEMISTRY AND PHYSICS, 2014, 卷号: 145, 期号: 3, 页码: 510-514
Authors:  Long, M;  Zhou, HL;  Gao, DQ(高大强);  Wu, CJ;  Gao, M;  Shao, JF(邵佳锋);  Qi, J(祁菁);  Qi, J (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Peoples R China.
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Magnetic materials  Semiconductors  Sol-gel growth  Nanostructures  
Multimode Resistive Switching in Single ZnO Nanoisland System 期刊论文
SCIENTIFIC REPORTS, 2013, 卷号: 3, 页码: -
Authors:  Qi, J(祁菁);  Olmedo, M;  Zheng, JG;  Liu, JL;  Qi, J (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Dept Phys, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Peoples R China.
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