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Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM [期刊论文]
Journal of Semiconductors, 2014, 卷号: 35, 期号: 10, 页码: 60-63
Sun PX(孙鹏霄);  Liu S(刘肃);  Li L(李泠);  Liu M(刘明)
  |  View/Download:66/1
 
Numerical model of tandem organic light-emitting diodes based on a transition metal oxide interconnector layer [期刊论文]
Journal of Semiconductors, 2014, 卷号: 35, 期号: 4, 页码: 72-80
Lu FP(路飞平);  Peng YQ(彭应全);  Xing YZ(邢永忠)
View/Download:12/0
 
An ultra-low-power area-efficient non-volatile memory in a 0.18μm single-poly CMOS process for passive RFID tags [期刊论文]
Journal of Semiconductors, 2013, 卷号: 34, 期号: 8, 页码: 94-98
Jia XY(贾晓云);  Feng P(冯鹏);  Zhang SG(张胜广);  Wu NJ(吴南健);  Zhao BQ(赵柏秦);  Liu S(刘肃)
View/Download:16/0
 
Dependence of transient performance on potential distribution in a static induction thyristor channel [期刊论文]
Journal of Semiconductors, 2012, 卷号: 33, 期号: 4, 页码: 69-74
Liu CJ(刘春娟);  Liu S(刘肃);  Bai YJ(白雅洁)
View/Download:16/0
 
Nickel ohmic contacts of high-concentration P-implanted 4H-SiC [期刊论文]
Journal of Semiconductors, 2012, 卷号: 33, 期号: 3, 页码: 118-121
Liu CJ(刘春娟);  Liu S(刘肃);  Feng JJ(冯晶晶);  Wu R(吴蓉)
  |  View/Download:19/0
 
Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure [期刊论文]
Journal of Semiconductors, 2011, 卷号: 32, 期号: 11, 页码: 60-64
Wang YS(王永顺);  Feng JJ(冯晶晶);  Liu CJ(刘春娟);  Wang ZX(汪再兴);  Zhang CZ(张彩珍);  Chang P(常鹏)
  |  View/Download:95/1
 
Analytical model for the dispersion of sub-threshold current in organic thin-film transistors [期刊论文]
Journal of Semiconductors, 2011, 卷号: 32, 期号: 11, 页码: 55-59
Chen YP(陈映平);  Shang LW(商立伟);  Ji ZY(姬濯宇);  Wang H(王宏);  Han MX(韩买兴);  Liu X(刘欣);  Liu M(刘明)
View/Download:10/0
 
Enhancing the Performance of the Organic Light-emitting Device (OLED) by Thermal Treatment [期刊论文]
CHINESE JOURNAL OF ELECTRONICS, 2011, 卷号: 20, 期号: 1, 页码: 55-57
Zhang, CL;  Zhang, Y;  Li, HX;  Wang, FC(王方聪);  Zhang, GB;  Chen, D;  Jia, XY;  Liu, S(刘肃)
View/Download:38/0
 
Physical effect on transition from blocking to conducting state of barrier-type thyristor [期刊论文]
Journal of Semiconductors, 2010, 卷号: 31, 期号: 12, 页码: 33-37
Li HR(李海蓉);  Li SY(李思渊)
View/Download:18/0
 
A novel method for measuring carrier lifetime and capture cross-section by using the negative resistance I-V characteristics of a barrier-type thyristor [期刊论文]
Journal of Semiconductors, 2010, 卷号: 31, 期号: 8, 页码: 65-69
Li HR(李海蓉);  Li SY(李思渊)
View/Download:19/0
 

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