兰州大学机构库

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Impact of resistive switching parameters on resistive random access memory crossbar arrays 期刊论文
MODERN PHYSICS LETTERS B, 2020, 卷号: 34, 期号: 12
Authors:  Fu, Liping;  Chen, Sikai;  Wu, Zewei;  Li, Xiaoyan;  You, Mingyang;  Fan, XL(范小龙);  Gao, Xiaoping;  Li, YT(李颖弢)
Favorite  |  View/Download:5/0  |  Submit date:2020/07/13
RRAM  crossbar array  1D1R  1S1R  
Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5390-5394
Authors:  Li, YT(李颖弢);  Li, Xiaoyan;  Fu, Liping;  Chen, Rongbo;  Wang, Hong;  Gao, Xiaoping
Favorite  |  View/Download:8/0  |  Submit date:2019/10/25
Interface layer  multilayer  resistive random-access memory (RRAM)  resistive switching  
阻变存储器无源高密度交叉阵列研究进展 期刊论文
科学通报, 2018, 卷号: 63, 期号: 28/29, 页码: 2954-2966
Authors:  李晓燕;  李颖弢;  高晓平;  陈传兵;  韩根亮
Favorite  |  View/Download:23/0  |  Submit date:2019/10/15
阻变存储器  高密度  无源交叉阵列  交叉串扰  resistive random access memory  high density  passive crossbar array  cross-talk  
1T1R结构RRAM的故障可测性设计 期刊论文
半导体技术, 2018, 卷号: 43, 期号: 5, 页码: 388-393,400
Authors:  陈传兵;  许晓欣;  李晓燕;  李颖弢
Favorite  |  View/Download:8/0  |  Submit date:2019/10/15
1T1R结构  阻变随机存储器(RRAM)  内建自测试(BIST)  故障类型  测试算法  故障定位  one transistor one resistance (1T1R) structure  resistive random access memory (RRAM)  build-in-self-test (BIST)  fault type  detection algorithm  fault location  
An overview of resistive random access memory based high-density crossbar array 期刊论文
Kexue Tongbao/Chinese Science Bulletin, 2018, 卷号: 63, 期号: 28-29, 页码: 2954-2966
Authors:  Li, Xiaoyan;  Li, YT(李颖弢);  Gao, Xiaoping;  Chen, Chuanbing;  Han, Genliang
Favorite  |  View/Download:2/0  |  Submit date:2020/07/08
Stable resistive switching characteristics of ZrO2-based memory device with low-cost 期刊论文
Microelectronic Engineering, 2017, 卷号: 172, 页码: 26-29
Authors:  Fu, Liping;  Li, YT(李颖弢);  Han, Genliang;  Gao, Xiaoping;  Chen, Chuanbing;  Yuan, Peng;  Li, YT(李颖弢)
Favorite  |  View/Download:116/0  |  Submit date:2018/01/19
RRAM  ZrO2  Resistive switching  Low-cost  
A nanostructured hematite film prepared by a facile "top down" method for application in photoelectrochemistry 期刊论文
DALTON TRANSACTIONS, 2016, 卷号: 45, 期号: 41, 页码: 16221-16230
Authors:  Qin, Dong-Dong;  Li, Yang;  Ning, Xing-Ming;  Wang, Qiu-Hong;  He, Cai-Hua;  Quan, Jing-Jing;  Chen, Jing;  Li, Ying-Tao;  Lu, Xiao-Quan;  Tao, Chun-Lan...Qin, Dong-Dong;  Li, Yang;  Ning, Xing-Ming;  Wang, Qiu-Hong;  He, Cai-Hua;  Quan, Jing-Jing;  Chen, Jing;  Li, Ying-Tao;  Lu, Xiao-Quan;  Tao, Chun-Lan
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Research on feasibility of using a Transient Voltage Suppressor as the selection device for bipolar RRAM 期刊论文
Microelectronic Engineering, 2016, 卷号: 164, 页码: 20-22
Authors:  Li, YT(李颖弢);  Wang, Yang;  Fu, Liping;  Chen, Chuanbing;  Yuan, Peng;  Gao, Xiaoping
Favorite  |  View/Download:2/0  |  Submit date:2019/06/04
Self-compliance multilevel storage characteristic in HfO2-based device 期刊论文
Chinese Physics B, 2016, 卷号: 25, 期号: 10
Authors:  Gao, Xiao-Ping;  Fu, Li-Ping;  Chen, Chuan-Bing;  Yuan, Peng;  Li, YT(李颖弢)
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resistive switching  resistive random access memory  multilevel  self-compliance  
Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory 期刊论文
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2014, 卷号: 13, 期号: 2, 页码: 432-438
Authors:  Sun, PX;  Li, L;  Lu, ND;  Li, YT(李颖弢);  Wang, M;  Xie, HW;  Liu, S(刘肃);  Liu, M;  Li, L (reprint author), Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China.
Adobe PDF(755Kb)  |  Favorite  |  View/Download:242/1  |  Submit date:2015/05/25
Transient Joule heating effect  Conductive-bridge random access memory (CBRAM)  Switching process