兰州大学机构库

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Influence of AlGaN back-barrier on irradiation tolerance of AlGaN/AlN/GaN HEMTs 期刊论文
PHYSICS LETTERS A, 2021, 卷号: 410
Authors:  Tang, Jinjin;  Liu, GP(刘贵鹏);  Mao, Bangyao;  Ali, Salamat;  Zhao, Guijuan;  Yang, JH(杨建红)
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Proton irradiation  GaN-based HEMT  AlGaN back-barrier  Two-dimensional electron gas  Mobility  
Influence of AlGaN back-barrier on irradiation tolerance of AlGaN/AlN/GaN HEMTs 期刊论文
PHYSICS LETTERS A, 2021
Tang, Jinjin; Liu, Guipeng; Mao, Bangyao; Ali, Salamat; Zhao, Guijuan; Yang, Jianhong
Favorite  |  View/Download:4/0  |  Submit date:2021/08/18
Elucidating the mechanistic origins of P dopants triggered active sites and direct Z-scheme charge transfer by P-MoS2@WO3 heterostructures for efficient photocatalytic hydrogen evolution 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 872
Authors:  Wei, Xuegang;  Zhang, Xiaqing;  Ali, Salamat;  Han, WH(韩卫华);  He, DY(贺德衍);  Wang, Jiatai;  Kong, Shunlian;  Feng, Zhongling;  Zhang, Guangan;  Qi, J(祁菁)...Wei, Xuegang;  Zhang, Xiaqing;  Ali, Salamat;  Han, WH(韩卫华);  He, DY(贺德衍);  Wang, Jiatai;  Kong, Shunlian;  Feng, Zhongling;  Zhang, Guangan;  Qi, J(祁菁)
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Phosphorus-dopedMolybdenum disulfideThe basal planeHydrogen evolutionTungsten oxide  
Elucidating the mechanistic origins of P dopants triggered active sites and direct Z-scheme charge transfer by P-MoS2@WO3 heterostructures for efficient photocatalytic hydrogen evolution 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2021
Wei, Xuegang; Zhang, Xiaqing; Ali, Salamat; Han, Weihua; He, Deyan; Wang, Jiatai; Kong, Shunlian; Feng, Zhongling; Zhang, Guangan; Qi, Jing
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Effect of proton irradiation on the mobility of two-dimensional electron in AlGaN/AlN/GaN high electron mobility transistors at low temperature 期刊论文
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 2020, 卷号: 38, 期号: 2
Authors:  Tang, Jinjin;  Liu, GP(刘贵鹏);  Zhao, Guijuan;  Xing, Shu'An;  Malik, Salamat Ali
Favorite  |  View/Download:8/0  |  Submit date:2020/07/07
Effect of proton irradiation on the mobility of two-dimensional electron in AlGaN/AlN/GaN high electron mobility transistors at low temperature 期刊论文
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 2020
Tang, Jinjin; Liu, Guipeng; Zhao, Guijuan; Xing, Shu'An; Malik, Salamat Ali
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