兰州大学机构库

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Influence of AlGaN back-barrier on irradiation tolerance of AlGaN/AlN/GaN HEMTs 期刊论文
PHYSICS LETTERS A, 2021, 卷号: 410
Authors:  Tang, Jinjin;  Liu, GP(刘贵鹏);  Mao, Bangyao;  Ali, Salamat;  Zhao, Guijuan;  Yang, JH(杨建红)
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Proton irradiation  GaN-based HEMT  AlGaN back-barrier  Two-dimensional electron gas  Mobility  
Influence of AlGaN back-barrier on irradiation tolerance of AlGaN/AlN/GaN HEMTs 期刊论文
PHYSICS LETTERS A, 2021
Tang, Jinjin; Liu, Guipeng; Mao, Bangyao; Ali, Salamat; Zhao, Guijuan; Yang, Jianhong
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Valence band offset of ReS2/BN heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
PHYSICS LETTERS A, 2021, 卷号: 392
Authors:  Huang, Heyuan;  Yang, WG(杨文革);  Xing, Shu'an;  Zhao, Guijuan;  Li, Xunshuan;  Liu, GP(刘贵鹏);  Yang, JH(杨建红)
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ReS2/BN van der Waals heterojunction  Band alignment  X-ray photoelectron spectroscopy  
Valence band offset of ReS2/BN heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
PHYSICS LETTERS A, 2021
Huang, Heyuan; Yang, Wenge; Xing, Shu'an; Zhao, Guijuan; Li, Xunshuan; Liu, Guipeng; Yang, Jianhong
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Determination of band alignment in two-dimensional h-BN/WS2 van der waals heterojunction by X-ray photoelectron spectroscopy 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 854
Authors:  Xing, Shu'an;  Zhao, Guijuan;  Xu, Yan;  Wang, J(王杰);  Li, Xunshuan;  Yang, Wenge;  Liu, GP(刘贵鹏);  Yang, JH(杨建红)
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Alignment  Energy gap  Heterojunctions  Monolayers  Photoelectrons  Photons  Tungsten compounds  Van der Waals forces  X ray photoelectron spectroscopyBand alignments  Conduction band offset  Measured values  Type i band alignments  Valence band offsets  Van der waals  
Determination of band alignment in two-dimensional h-BN/WS2 van der waals heterojunction by X-ray photoelectron spectroscopy 期刊论文
Journal of Alloys and Compounds, 2021
Xing, Shu'an; Zhao, Guijuan; Xu, Yan; Wang, Jie; Li, Xunshuan; Yang, Wenge; Liu, Guipeng; Yang, Jianhong
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Tuning the mechanical and electronic properties and carrier mobility of phosphorene via family atom doping: a first-principles study 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2020, 卷号: 8, 期号: 42, 页码: 14902-14909
Authors:  Xu, Yan;  Liu, GP(刘贵鹏);  Xing, Shu'an;  Zhao, Guijuan;  Yang, JH(杨建红)
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Tuning the mechanical and electronic properties and carrier mobility of phosphorene via family atom doping: a first-principles study 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2020
Xu, Yan; Liu, Guipeng; Xing, Shu'an; Zhao, Guijuan; Yang, Jianhong
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Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 卷号: 834
Authors:  Xing, Shu'an;  Zhao, Guijuan;  Wang, J(王杰);  Xu, Yan;  Ma, Zhixin;  Li, Xunshuan;  Yang, WG(杨文革);  Liu, GP(刘贵鹏);  Yang, JH(杨建红)
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van der Waals heterojunction  Molybdenum disulfide  Hexagonal boron nitride  Band alignment  X-ray photoelectron spectroscopy  
Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2020
Xing, Shu'an; Zhao, Guijuan; Wang, Jie; Xu, Yan; Ma, Zhixin; Li, Xunshuan; Yang, Wenge; Liu, Guipeng; Yang, Jianhong
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