兰州大学机构库

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Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer 期刊论文
CHINESE PHYSICS B, 2019, 卷号: 28, 期号: 8
Authors:  Zhang, Wen-Ting;  Wang, Fen-Xia;  Li, Yu-Miao;  Guo, Xiao-Xing;  Yang, JH(杨建红)
Favorite  |  View/Download:18/0  |  Submit date:2019/09/20
organic floating-gate memory  polysilicon floating-gate  memory window  
Numerical simulation study of organic nonvolatile memory with polysilicon floating gate 期刊论文
CHINESE PHYSICS B, 2016, 卷号: 25, 期号: 6, 页码: 067102-1-067102-7
Authors:  Yan, ZW;  Wang, J;  Qiao, JL;  Chen, WJ;  Yang, P;  Xiao, T;  Yang, JH(杨建红);  Yang, JH (reprint author), Lanzhou Univ, Inst Microelect, Lanzhou 730000, Peoples R China.
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organic floating gate memory  polysilicon floating gate  programing and erasing operations  device simulation  
Nonvolatile nano-crystal floating gate OFET memory with light assisted program 期刊论文
ORGANIC ELECTRONICS, 2011, 卷号: 12, 期号: 7, 页码: 1236-1240
Authors:  Wang, H;  Ji, ZY;  Shang, LW;  Chen, YP;  Han, MX;  Liu, X;  Peng, YQ(彭应全);  Liu, M;  Liu, M (reprint author), Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China.
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Nonvolatile memory  Organic memory  Floating gate  Light assisted program  
Nonvolatile memory devices based on organic field-effect transistors 期刊论文
CHINESE SCIENCE BULLETIN, 2011, 卷号: 56, 期号: 13, 页码: 1325-1332
Authors:  Wang, H;  Peng, YQ(彭应全);  Ji, ZY;  Liu, M;  Shang, LW;  Liu, XH;  Peng, YQ (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
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organic nonvolatile memory  organic field-effect transistors  floating gate  ferroelectric  organic electret