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Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 卷号: 834
Authors:  Xing, Shu'an;  Zhao, Guijuan;  Wang, Jie;  Xu, Yan;  Ma, Zhixin;  Li, Xunshuan;  Yang, WG(杨文革);  Liu, GP(刘贵鹏);  Yang, JH(杨建红)
Favorite  |  View/Download:90/0  |  Submit date:2020/06/16
van der Waals heterojunction  Molybdenum disulfide  Hexagonal boron nitride  Band alignment  X-ray photoelectron spectroscopy  
Indirect-direct band gap transition by van der Waals interaction engineering in MoS2/WS2 bilayer heterojunction 会议论文
International Conference on Machinery, Electronics and Control Simulation (ICMECS)/Applied Mechanics and Materials, Weihai, Shandong Province, China, September 27, 2014 - September 28, 2014
Authors:  Cao, HN;  Zhang, ZY(张稚雅);  Si, MS(司明苏);  Zhang, F;  Wang, YH(王育华);  Cao, HN (reprint author), Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China.
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Indirect-direct band gap transition  MoS2/WS2 heterojunction  Van der Waals interaction engineering  First principles calculations