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Comparative study on photoluminescence from Si-containing silicon oxide films and Ge-containing silicon oxide films
Alternative Title含纳米硅和纳米锗的氧化硅薄膜光致发光的比较研究
Ma, SY; Qin, GG; You, LP; Wang, YY(王印月); Ma, SY (reprint author), Northwest Normal Univ, Dept Phys, Lanzhou 730070, Peoples R China.
2001-08
Source PublicationACTA PHYSICA SINICA   Impact Factor & Quartile Of Published Year  The Latest Impact Factor & Quartile
ISSN1000-3290
Volume50Issue:8Pages:1580-1584
AbstractSi-containing silicon oxide (SSO) films and Ge-containing silicon oxide (GSO) films were deposited on p-type Si substrates using the RF magnetron sputtering technique with a Si-SiO2 and a Ge-SiO2 composite target, respectively. These films were annealed in a N-2 ambient at temperatures from 300 to 1100 degreesC. Using high resolution transmission electron microscopy, nanometer Si particles and nanometer Ge particles were observed in the SSO and GSO films, respectively, after annealing at 900 or 1100 degreesC. Ali the PL spectra from the two types of films annealed at various temperatures have similar shapes with peak positions around 580nm (similar to2.1 eV). It is indicated that light emission originates from luminescence centers in Si oxide films. The experimental results have been explained reasonably.
Other Abstract分别以硅 二氧化硅和锗 -二氧化硅复合靶作为溅射靶 ,采用磁控溅射技术在p型硅衬底上淀积了含纳米硅的氧化硅薄膜和含纳米锗的氧化硅薄膜 .各样品分别在氮气氛中经过 30 0至 110 0℃不同温度的退火处理 .使用高分辨透射电子显微镜可以观察到经 90 0和 110 0℃退火的含纳米硅的氧化硅薄膜中的纳米硅粒 ,和经 90 0和 110 0℃退火的含纳米锗的氧化硅薄膜中的纳米锗粒 .经过不同温度退火处理的含纳米硅的氧化硅和含纳米锗的氧化硅薄膜的光致发光谱均具有相似的峰型 ,且它们的发光峰位均位于 5 80nm(2 .1eV)附近 .可以认为含纳米硅的氧化硅和含纳米锗的氧化硅薄膜的光发射主要来自...
Keywordphotoluminescence nanometer Si nanometer Ge luminescence center 光致发光 纳米硅 纳米锗 发光中心
Subject AreaPhysics
PublisherCHINESE PHYSICAL SOC
Publication PlaceBEIJING
Indexed BySCIE ; EI ; CSCD
Language中文
First Inst
Funding Project国家自然科学基金项目 ; 甘肃省教育厅资助项目
Host of Journal中国物理学会
Project Number国家自然科学基金(批准号:59772027) ; 甘肃省教育委员会科研基金(批准号:98117) ; 西南石油学院油气藏地质及开发工程国家重点
WOS IDWOS:000170333200033
CSCD IDCSCD:783134
Funding OrganizationNSFC ; GSED
SubtypeArticle
EI ID2001496755786
IRIDCNKI:0019308
DepartmentNorthwest Normal Univ, Dept Phys, Lanzhou 730070, Peoples R China;
Beijing Univ, Dept Phys, Beijing 100871, Peoples R China;
Lanzhou Univ, Coll Phys Sci & Technol, Lanzhou 730000, Peoples R China
Citation statistics
Cited Times:9[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttps://ir.lzu.edu.cn/handle/262010/103676
Collection物理科学与技术学院
Corresponding AuthorMa, SY (reprint author), Northwest Normal Univ, Dept Phys, Lanzhou 730070, Peoples R China.
Recommended Citation
GB/T 7714
Ma, SY,Qin, GG,You, LP,et al. Comparative study on photoluminescence from Si-containing silicon oxide films and Ge-containing silicon oxide films[J]. ACTA PHYSICA SINICA,2001,50(8):1580-1584.
APA Ma, SY,Qin, GG,You, LP,Wang, YY,&Ma, SY .(2001).Comparative study on photoluminescence from Si-containing silicon oxide films and Ge-containing silicon oxide films.ACTA PHYSICA SINICA,50(8),1580-1584.
MLA Ma, SY,et al."Comparative study on photoluminescence from Si-containing silicon oxide films and Ge-containing silicon oxide films".ACTA PHYSICA SINICA 50.8(2001):1580-1584.
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