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Hydrothermal epitaxial growth and nonvolatile bipolar resistive switching behavior of LaFeO3-PbTiO3 films on Nb:SrTiO3(001) substrate
Zhang, P; Gao, CX(高存绪); Lv, FZ; Wei, YP; Dong, CH; Jia, CL(贾成龙); Liu, QF(刘青芳); Xue, DS(薛德胜); Gao, CX (reprint author), Lanzhou Univ, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Peoples R China.
2014-10-13
Source PublicationAPPLIED PHYSICS LETTERS   Impact Factor & Quartile
ISSN0003-6951
Volume105Issue:15Pages:-
AbstractEpitaxial LaFeO3-PbTiO3 (LFPTO) thin films were hydrothermally grown on the Nb-SrTiO3 (100) (NSTO) substrates with a thickness about 250 nm. As fabricated Pt/LFPTO/NSTO/Pt devices exhibit reversible bipolar resistive switching behavior. The resistance ratios between high resistance state and low resistance state exceed three orders of magnitude, which can be maintained over 6 h without observable degradation. It indicates that the Pt/LFPTO/NSTO/Pt devices reveal excellent data retention and endurance characteristics. The resistive switching mechanism of the device could be attributed to the trap-controlled space-charge-limited current conduction which is controlled by the localized oxygen vacancies in the films. Furthermore, variation of Pt/LFPTO Schottky junction depletion thickness and barriers height modulated by oxygen vacancies at Pt/LFPTO interface was suggested to be responsible for the resistance switching behaviors of the devices. (C) 2014 AIP Publishing LLC.
Subject AreaPhysics
PublisherAMER INST PHYSICS
DOI10.1063/1.4898337
Publication PlaceMELVILLE
Indexed BySCIE ; EI
Language英语
First Inst
Funding Project国家自然科学基金项目 ; 国家重点基础研究发展计划以及国家重大科学研究计划(973计划) ; 长江学者和创新团队发展计划 ; 中央高校基本科研业务费专项资金
Project NumberNational Basic Research Program of China [2012CB933101] ; National Natural Science Foundation of China [11274147, 51371093, 11034004] ; PCSIRT [IRT1251] ; Fundamental Research Funds for the Central Universities [lzujbky-2013-ct01, lzujbky-2014-174, lzujbky-2014-233]
WOS IDWOS:000344344700055
Funding OrganizationNSFC ; MOST ; MOE ; LZU
SubtypeArticle
EI ID20144300125884
Department[Zhang, Peng;
Gao, Cunxu;
Lv, Fengzhen;
Wei, Yanping;
Dong, Chunhui;
Jia, Chenglong;
Liu, Qingfang;
Xue, Desheng] Lanzhou Univ, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Peoples R China
Citation statistics
Cited Times:33[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttps://ir.lzu.edu.cn/handle/262010/106788
Collection物理科学与技术学院
Corresponding AuthorGao, CX (reprint author), Lanzhou Univ, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Peoples R China.
Recommended Citation
GB/T 7714
Zhang, P,Gao, CX,Lv, FZ,et al. Hydrothermal epitaxial growth and nonvolatile bipolar resistive switching behavior of LaFeO3-PbTiO3 films on Nb:SrTiO3(001) substrate[J]. APPLIED PHYSICS LETTERS,2014,105(15):-.
APA Zhang, P.,Gao, CX.,Lv, FZ.,Wei, YP.,Dong, CH.,...&Gao, CX .(2014).Hydrothermal epitaxial growth and nonvolatile bipolar resistive switching behavior of LaFeO3-PbTiO3 films on Nb:SrTiO3(001) substrate.APPLIED PHYSICS LETTERS,105(15),-.
MLA Zhang, P,et al."Hydrothermal epitaxial growth and nonvolatile bipolar resistive switching behavior of LaFeO3-PbTiO3 films on Nb:SrTiO3(001) substrate".APPLIED PHYSICS LETTERS 105.15(2014):-.
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