兰州大学机构库 >口腔医学院
Photocarrier Promoted Pore and Inverted Pyramid Formation in Porous Silicon Films on n-Type Silicon
Wang, FG; Zhang, MZ; Zhao, GT; Cheng, JC; Zhang, JY; Wang, FG (reprint author), Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China.
2014
Source PublicationECS Journal of Solid State Science and Technology   Impact Factor & Quartile
ISSN2162-8769
Volume3Issue:3Pages:P32-P36
AbstractPorous silicon (PS) films with photocarrier-created pores (PCPs) in the films and symbiotic inverted pyramids (SIPs) at the interfaces were prepared by electrochemical etching of n-type silicon in HF ethanol solution. The effect of back side illumination, doping level of silicon, current density and HF concentration on pore and interface morphology of PS films were investigated. SEM results demonstrated that Photocarriers, generated by back side illumination, was essential to the formation of PCPs and SIPs. The moderately doped n-type silicon with P doping level in 1.1 x 10(17) -2 x 10(16) was suitable for PCP formation. The sizes of SIPs and the quantity of PCPs at their centers could be adjusted by current density when it was smaller than 25 mA cm(-2), in which the formation of PCPs competed with the growth of PS film for photocarriers and the increase of current density enhanced the growth of PS film. The formation of SIPs with four crystal planes approaching energy-stable (111) planes was believed to balance these two competitive behaviors. Since the PCPs were actually caused by photocarrier-promoted chemical etching, the HF concentration suitable for PCP formation was smaller than 20%. (C) 2014 The Electrochemical Society.
Subject AreaMaterials Science ; Physics
PublisherELECTROCHEMICAL SOC INC
DOI10.1149/2.010403jss
Publication PlacePENNINGTON
Indexed BySCIE
Language英语
First Inst
WOS IDWOS:000331796100009
SubtypeArticle
Department[Wang, Fuguo;
Cheng, Jinchun;
Zhang, Junyan] Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China;
[Zhang, Minzhen;
Zhao, Guoting] Lanzhou Univ, Sch Stomatol, Lanzhou 730000, Peoples R China
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttps://ir.lzu.edu.cn/handle/262010/122110
Collection口腔医学院
Corresponding AuthorWang, FG (reprint author), Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China.
Recommended Citation
GB/T 7714
Wang, FG,Zhang, MZ,Zhao, GT,et al. Photocarrier Promoted Pore and Inverted Pyramid Formation in Porous Silicon Films on n-Type Silicon[J]. ECS Journal of Solid State Science and Technology,2014,3(3):P32-P36.
APA Wang, FG,Zhang, MZ,Zhao, GT,Cheng, JC,Zhang, JY,&Wang, FG .(2014).Photocarrier Promoted Pore and Inverted Pyramid Formation in Porous Silicon Films on n-Type Silicon.ECS Journal of Solid State Science and Technology,3(3),P32-P36.
MLA Wang, FG,et al."Photocarrier Promoted Pore and Inverted Pyramid Formation in Porous Silicon Films on n-Type Silicon".ECS Journal of Solid State Science and Technology 3.3(2014):P32-P36.
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