兰州大学机构库 >物理科学与技术学院
Gas sensing enhancing mechanism via doping-induced oxygen vacancies for gas sensors based on indium tin oxide nanotubes
Zhou, JY(周金元)1; Bai, Jing Long1; Zhao, Hao1; Yang, Zhen Yu1; Gu, Xiu Yun1; Huang, Bao Yu1; Zhao, Chang Hui2; Cairang, Limao1,3; Sun, Geng Zhi4; Zhang, ZX(张振兴)1; Pan, XJ(潘孝军)1; Xie, EQ(谢二庆)1
2018-07-15
Source PublicationSENSORS AND ACTUATORS B-CHEMICAL   Impact Factor & Quartile Of Published Year  The Latest Impact Factor & Quartile
ISSN0925-4005
Volume265Issue:nullPages:273-284
Abstract

It's demonstrated that the defects induced by doping can greatly influence the sensing properties of oxide based gas sensors. In this work, the authors have designed indium tin oxide nanotubes (ITO NTs) with different Sn doping concentrations. Results showed that the walls of ITO NTs are comprised of the formed ITO and redundant In2O3 nanoparticles (NPs) at low doping concentration, and the doping-induced oxygen vacancies ((VoS)-S-center dot center dot) can be tuned by Sn concentrations. Series of sensing tests to formaldehyde gas indicated that the ITO-7 NTs show the lowest working temperature (160 degrees C) and the highest specific response. Here, It is noted that to eliminate the influence of the coating amount of sensing performances, a concept of specific response was proposed i.e., R-air/(m-R-gas), where R-air and R-gas respectively stand for the resistances of gas sensors in the reference gas (in air this case) and in the test gas ambience, and m stands for the mass of the coated sensing materials. The decreased working temperature could be attributed to the formed In2O3 NPs/ITO tubular structure, and the enhanced specific response might be mainly associated with the (VoS)-S-center dot center dot. Furthermore, a possible gas sensing enhancing mechanism via (VoS)-S-center dot center dot for ITO-based gas sensors was proposed based on our results and analysis. This research would give some instructive advice to design high-performances oxide-based gas sensors via tuning the (VoS)-S-center dot center dot. (C) 2018 Elsevier B.V. All rights reserved.

KeywordIndium Tin Oxide Nanotubes Formaldehyde Oxygen Vacancies Electrospinning
PublisherElsevier
DOI10.1016/j.snb.2018.03.008
URL查看原文
Indexed BySCI ; SCIE
Language英语
First Inst
WOS Research AreaChemistry ; Electrochemistry ; Instruments & Instrumentation
WOS SubjectChemistry, Analytical ; Electrochemistry ; Instruments & Instrumentation
WOS IDWOS:000430232500033
PublisherELSEVIER SCIENCE SA
Original Document TypeArticle
Citation statistics
Document Type期刊论文
Identifierhttps://ir.lzu.edu.cn/handle/262010/193064
Collection物理科学与技术学院
Affiliation
1.Lanzhou Univ, Sch Phys Sci & Technol, 222 South Tianshui Rd, Lanzhou 730000, Gansu, Peoples R China
2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, 1088 Xueyuan Ave, Shenzhen 518055, Peoples R China
3.Northwest Minzu Univ, Coll Elect Engn, 1 Xibei Xincun, Lanzhou 730030, Gansu, Peoples R China
4.Nanjing Tech Univ, Inst Adv Mat, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China
First Author AffilicationSchool of Physical Science and Technology
First Signature AffilicationSchool of Physical Science and Technology
Recommended Citation
GB/T 7714
Zhou, Jin Yuan,Bai, Jing Long,Zhao, Hao,et al. Gas sensing enhancing mechanism via doping-induced oxygen vacancies for gas sensors based on indium tin oxide nanotubes[J]. SENSORS AND ACTUATORS B-CHEMICAL,2018,265(null):273-284.
APA Zhou, Jin Yuan.,Bai, Jing Long.,Zhao, Hao.,Yang, Zhen Yu.,Gu, Xiu Yun.,...&Xie, Er Qing.(2018).Gas sensing enhancing mechanism via doping-induced oxygen vacancies for gas sensors based on indium tin oxide nanotubes.SENSORS AND ACTUATORS B-CHEMICAL,265(null),273-284.
MLA Zhou, Jin Yuan,et al."Gas sensing enhancing mechanism via doping-induced oxygen vacancies for gas sensors based on indium tin oxide nanotubes".SENSORS AND ACTUATORS B-CHEMICAL 265.null(2018):273-284.
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