兰州大学机构库 >物理科学与技术学院
稀土掺杂宽带隙氮化物半导体薄膜的制备与性能研究
Alternative TitleThe Preparation and Properties of the Rare Earths-Doped Wide Bandgap Nitrides Semiconductor Films
张振兴
Thesis Advisor谢二庆
2009-12-05
Degree Grantor兰州大学
Place of Conferral兰州
Degree Name博士
Keyword氮化镓 氮化锌 溅射 稀土掺杂 发光机制
Abstract稀土掺杂宽带隙半导体材料具有发光亮度高、色彩纯正等特点,在光通讯和全色显示技术中具有广阔的应用前景。开展对宽带隙半导体材料稀土掺杂的研究具有重要的理论价值与应用前景。 本论文以氮化镓和氮化锌为主要研究对象。采用直流磁控反应溅射方法,制备了氮化物及稀土掺杂薄膜,对其结构、光学及电学特性进行了研究,取得了以下的研究结论: 1、利用直流磁控反应溅射方法,制备了晶粒尺寸可控的纤锌矿纳米晶GaN薄膜。随着衬底温度的升高,薄膜的生长速率先增大后减小,光学带隙从4.99eV降低到4.68eV,带边发射峰发生蓝移。对p-Si/n-GaN异质结的I-V曲线分析,结果表明热电子发射和隧穿是其主要的电流输运机制;利用深能级瞬态谱仪对薄膜缺陷的激活能、俘获截面等进行了定量的分析。 2、利用氨化法制备了纤锌矿结构GaN纳米晶薄膜,得到最优化的退火条件是950℃下氨化1小时。室温光致发光测试得到了尖锐的365nm的带边发射峰和430nm处的来源于薄膜的本征缺陷或表面态的发射峰。Raman光谱出现了被C4<上标!>6v<下标!>点群所禁戒的由E2<下标!>光学支在布里渊区的M对称点和富氮八面体Ga-N6<下标!>键振动引起的分别位于257和423cm−1<上标!>处的Raman峰。 3、优化直流磁控反应溅射参数,制备了原位掺Er和Tb的GaN纳米晶薄膜。薄膜的光学带隙在4.1~4.3eV之间,室温光致发光谱分别得到了稀土Er3+<上标!>的4<上标!>S3/2<下标!>(2<上标!>H11/2<下标!>) → 4<上标!>H15/2<下标!>能级的跃迁产生的554nm处的发光峰和Tb3+<上标!>离子内层4f电子5<上标!>D4<下标!> → 7<上标!>FJ<下标!>(J=6,5,4,3)跃迁产生的特征发光峰。改变溅射条件如衬底温度、溅射气压对薄膜Raman峰的影响微弱,都只出现了纤锌矿GaN的E2<下标!>(low)和A1<下标!>(LO)模式对应的振动峰。 4、利用直流磁控反应溅射方法,制备了原位Tb掺杂的Zn3<下标!>N2<下标!>薄膜。当溅射N2<下标!>组份从20%增加到60%,薄膜的生长择优取向由(321)转为(222),间接光学带隙从3.06eV降低到2.13eV,溅射N2<下标!>组份40%时出现较明显的Tb3+<上标!>离子特征发光峰。当恒定溅射氮气组份为30%时,衬底生长温度200℃制备的薄膜具有较好的结晶质量,Tb3+<上标!>离子的特征发光较强。随着退火温度的升高,薄膜从Zn3<下标!>N2<下标!>的立方结构变成ZnO的纤锌矿结构,可见光区的发光越来越强。
Other AbstractRare earths (REs)-doped wide bandgap semiconductor materials have very high intensityand pure color emission with the potential applications in optical communications and full color display. Therefore, doing research on those materials has important theoretical value and application prospect. In this dissertation, the structure, optical and electrical properties of the REs-undoped and doped nitrides (GaN and Zn3<下标!>N2<下标!>) thin films , which were prepared by direct current magnetron reactive sputtering (DCMRS), were studied. The results are listed as follows: 1. Nanocrystalline GaN thin films with controllable crystal size were obtained by DCMRS. As the substrate temperature increases, the growth rate first increases then decreases, the optical band gap decreases from 4.99 to 4.68eV, and the band emission shows blueshift.The I-V characteristic of the p-Si/n-GaN can be understood in terms of thermionic emission and tunneling emission mechanism. The activation energy and capture cross section of the trap level was quantificationally analyzed by Q-DLTS. 2. Ammonization method was used to prepare nanocrystalline GaN thin films and the optimum condition was determined at 950℃ for 1 h. Two photoluminescence peaks located at 365 and 431nm, which are related to the band emission and VGa<下标!>-related complex emission, respectively, are observed at room temperature. Two new additional Raman peaks at 257 and 423cm−1<上标!>, which are forbid by the space group, are observed. Those two peaks are attributed to the M symmetric point of E2<下标!> optical branch at zone-boundary phonon and the vibration mode of N-rich octahedral Ga-N6<下标!> bonds, respectively. 3. In-situ Er and Tb doped nanocrystalline GaN thin films were prepared by optimizing the parameters of DCMRS. The optical band gap of the films is 4.1~4.3 eV. Photoluminescence results show that the films exhibit the characteristic peaks of Er3+<上标!> and Tb3+<上标!> corresponding to intra-4f transitions of 4<上标!>S3/2<下标!>(2<上标!>H11/2<下标!>) → 4<上标!>I15/2<下标!> and 5<上标!>D4<下标!> → 7<上标!>FJ<下标!>(J=6,5,4,3), respectively. Only two Raman peaks corresponding to E2<下标!>(low) and A1<下标!>(LO) models of wurtzite GaN appear independently of sputtering parameters such different substrate temperature and sputtering pressure. 4. In-situ T...
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Language中文
Document Type学位论文
Identifierhttps://ir.lzu.edu.cn/handle/262010/229188
Collection物理科学与技术学院
Recommended Citation
GB/T 7714
张振兴. 稀土掺杂宽带隙氮化物半导体薄膜的制备与性能研究[D]. 兰州. 兰州大学,2009.
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