兰州大学机构库 >物理科学与技术学院
酞菁锡有机近红外光敏场效应管制备及其功能层结构研究
Alternative TitleFabrication of SnPc-based NIR Photosensitive Organic Field Effect Transistors and Study on Functional Layer Structures
梁圆龙
Thesis Advisor彭应全
2018-05-20
Degree Grantor兰州大学
Place of Conferral兰州
Degree Name硕士
Keyword酞菁锡 有机光敏场效应管 近红外 功能层结构
Abstract

酞菁锡(Tin phthalocyanine, SnPc)是一种在近红外区域有良好吸收特性的有机半导体材料,广泛应用于有机太阳能电池的活性层及其它有机光电器件中,但由于其极低的迁移率导致很难被应用到有机场效应晶体管中。本论文主要制备了基于酞菁锡光敏吸收材料的近红外(NIR)有机光敏场效应管(photosensitive organic field-effect transistor, PhOFET),研究了不同的功能层结构对器件光敏性能的影响,并阐明了高性能有机近红外光敏场效应管的功能层结构设计原则。主要内容分为两部分:
在第一部分,首先构筑了功能层为单层酞菁锡的NIR-PhOFET,测试结果表明,单层酞菁锡场效应管的迁移率很低,仅~10-6 cm2V-1s-1,同时器件表现出很低的光敏性能;通过引入具有高迁移率的并五苯(pentacene)薄膜作为器件的沟道传输层,构筑了功能层结构为pentacene/SnPc的p-p型有机场效应晶体管,器件的场效应迁移率显著提升,光敏性能也大幅增强,在入射光强为48.8 μW/cm2的850 nm近红外光照下光响应度达到了1.0×103 mA/W;制备了了功能层结构为pentacene/SnPc/C60的p-p-n型PhOFET,研究结果表明采用这种结构的器件的暗电流得到了有效抑制,同时由于功能层内形成的SnPc/C60平面异质结提供了受体/给体界面,使得光生激子的离解效率得到了提高,光响应度达到了2.68×103 mA/W,最大光暗电流比高达1.09×104,该器件表现出优异的近红外光敏性能。
在第二部分,从提高光生激子离解效率方面入手,主要探究了引入体异质结后的酞菁锡光敏场效应晶体管的光电性能。制备了功能结构为pentacene/SnPc:C60的p-i结构、活性层为pentacene/SnPc:C60/C60的p-i-n结构以及活性层为pentacene/SnPc/SnPc:C60的p-p-i结构的三种不同PhOFET器件,前两种结构的器件由于缺失酞菁锡光敏层,导致器件的光敏性能较差;p-p-i结构的器件的光响应度达到了1.89×103 mA/W、最大光暗电流比为5.93×103

Other Abstract

Tin phthalocyanine (SnPc) is a kind of organic semiconductor material with excellent absorbing characteristic in near-infrared (NIR) region, and has been widely used into active layer of organic solar cells and other organic optoelectronic devices. However, due to its much lower mobility, it could hardly be applied into an organic field-effect transistor. In this dissertation, we mainly focused on the fabrication of SnPc-based NIR photosensitive organic field-effect transistors (PhOFETs) and investigation into the photoelectric performance of their different active layer structures. In the process, we also explained the design principle of functional layer structure of high-performance NIR PhOFETs. The main content can be divided into two parts:
In part one, SnPc single layer PhOFET device was fabricated at first. The results indicate that SnPc single layer device shows a very poor performance as its mobility only takes a small value of ~10-6 cm2V-1s-1. The next step is to fabricate a p-p active layer structure device by introducing a pentacene channel layer, whose mobility is much higher. We see a significant rise in mobility and photosensitive performance in this device. Photoresponsivity of 1.0×103 mA/W was obtained when under illumination of 48.8 μW/cm2 at the wavelength of 850 nm. The device with p-p-n active layer structure was also fabricated. The results indicate that the dark current was suppressed effectively and the exciton dissociation efficiency was enhanced significantly. The photoresponsivity of the device goes up to 2.68×103 mA/W, the photosensitivity reaches a high value of 1.09×104. In short, this device exhibits excellent NIR photosensitive performance.
In the second part, starting from improving the photo-generated exciton dissociation efficiency, the photoelectric properties of the SnPc photoactive field-effect transistor after the introduction of bulk heterojunction were investigated. In the experiment, three PhOFET devices with different functional structures — a p-i structure of pentacene/SnPc:C60, a p-i-n structure of pentacene/SnPc:C60/C60, and a p-p-i structure of pentacene/SnPc/SnPc:C60 were fabricated. Due to the lack of SnPc photosensitive layer, the former two kinds of devices exhibited just moderate overall performance; while the device with p-p-i structure showed excellent photosensitive performance, whose photoresponsivity reached 1.89 × 103 mA/W, and the maximum ratio of light to dark current is 5.93 × 103.

URL查看原文
Language中文
Document Type学位论文
Identifierhttps://ir.lzu.edu.cn/handle/262010/229317
Collection物理科学与技术学院
Recommended Citation
GB/T 7714
梁圆龙. 酞菁锡有机近红外光敏场效应管制备及其功能层结构研究[D]. 兰州. 兰州大学,2018.
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