兰州大学机构库 >物理科学与技术学院
静电感应晶闸管关键工艺研究
Alternative TitleStudies on the key technology of Static Induction Thyristor
王冬峰
Thesis Advisor李思渊
2002-05-12
Degree Grantor兰州大学
Place of Conferral兰州
Degree Name硕士
Keyword静电感应晶闸管 外延 自掺杂
Abstract本论文在分析静电感应晶闸管SITH作用机理的基础上,系统分析了材料参数、工艺参数和结构参数与器件电性能的关系。对各种特性间的制约关系做了适度的参数调节,并进行了埋栅结构SITH的版图设计。提出了外延层必须达到的工艺参数,深入分析了外延工序中的自掺杂问题。对埋栅型SITH的关键制造技术进行了深入讨论,给出了相应的试验结果。
Other AbstractBased on the operational mechanism of SITH, the main electric parameters and construction are described and discussed in this thesis. The dependence of electrical characteristics on constructional parameters, material parameters, and technological parameters are analyzed in this article. On the basis of the correlation of properties of SITH, parameters are properly modulated, furthermore, the mask plate design of the buried gate SITH is given. The parameter of epitaxial layer is presented, and the problem of self-doping is also deeply analyzed. In addition, sticking points of fabrication technology of buried gate structure SITH are discussed in detail, some experimental results are presented accordingly.
URL查看原文
Language中文
Document Type学位论文
Identifierhttps://ir.lzu.edu.cn/handle/262010/229669
Collection物理科学与技术学院
Recommended Citation
GB/T 7714
王冬峰. 静电感应晶闸管关键工艺研究[D]. 兰州. 兰州大学,2002.
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