| 静电感应光敏晶体管（SIPT）光电传导机理的研究及其制作 |
| Alternative Title | Research on Photoelectric Mechanism and Fabrication of Static Induction Photosensitive Transistor(SIPT)
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| 高建玉 |
| Thesis Advisor | 何山虎
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| 2002-05-12
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| Degree Grantor | 兰州大学
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| Place of Conferral | 兰州
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| Degree Name | 硕士
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| Keyword | 光敏晶体管
静电感应光敏晶体管
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| Abstract | 根据国家自然科学基金资助项目40005002与973项目G2000048703所提供的从2001年4月至今的太阳光度计的辐射资料，我们研究计算了腾格里沙漠地区气溶胶光学厚度、埃斯特朗浑浊度系数、浑浊因子，并尝试用反演拟合的方法得出气溶胶谱分布结果，最后对大气散射相函数进行了初步的探讨。结果表明：
1、气溶胶光学厚度的变化与季节变化息息相关。在春季3月到5月，各波段气溶胶光学厚度最大，夏季较小，秋冬季节为最小。就月份来说，4月最大，基本在1.0左右；10月最小，基本在0.35以下。
2、总体而言，气溶胶光学厚度基本随波长的增大而减小，但不光滑，存在波动，主要出现在0.55微米、0.65微米和0.75微米这三个波段。对于年平均来说，0.55、0.65微米处的值较高，分别为0.598和0.626，0.75微米处的值较低，为0.447。
3、埃斯特朗浑浊度系数在春季非常高，平均值在0.4以上，属于严重浑浊大气；夏季次之，在0.1到0.3之间；秋季和冬季基本上在0.1到0.2之间，属于中等浑浊大气。
4、浑浊因子与埃斯特朗浑浊度系数反映结果一致，浑浊因子春季最大，在2001年4月达到最大，为10.0794。夏季次之，秋冬季节较小，其中10月最小，其值为3.195606。
5、气溶胶光学厚度、埃斯特朗浑浊度系数和浑浊因子，三者的年际变化趋势一致。
6、用容格谱的形式来反演拟合气溶胶谱分布所得结果合理，符合实际情况。
7、由于消光因子的作用，消光法对大粒子反演不敏感，最能反映0.1微米到1微米谱域的特性。
8、单个粒子散射相函数对大粒子的敏感性，导致小角散射方法反演大粒子谱分布时较为优越。 |
| Other Abstract | The paper starts with photoelectric performances of semiconductor and parameters of photosensitive devices. Firstly, categories, structures, working principles, performances and applications of photosensitive devices are summarized. Secondly, go into details of photosensitive diodes, especially on PN junction diode and PIN type ones. Describe their parameters qualitatively and quantitatively, and then give the relationship between these parameters and their processes, which is important to determine fabrication process of devices; and, at the same time, could be theoretic and experimental arguments of SIPT brought forward in the following contents.
SIPT is a new-fashioned photoelectric device, which integrates advantages of PIN and SIT. Namely, it has the excellent photoelectric performances of PIN，and also has the performances of good linearity, high gain, broad frequency band, low noise of SIT. Thus SITP has many merits compared with congener transistors, which is testified theoretically and experimentally. Then structure, working principal，I-V performance and applications of SIPT are given in the paper. And then, the project of designing and fabricating is educed, and fabricated this kind of device tentatively. Finally, give the conclusion. |
| URL | 查看原文
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| Language | 中文
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| Document Type | 学位论文
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| Identifier | https://ir.lzu.edu.cn/handle/262010/229679
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| Collection | 物理科学与技术学院
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Recommended Citation
GB/T 7714 |
高建玉. 静电感应光敏晶体管（SIPT）光电传导机理的研究及其制作[D]. 兰州. 兰州大学,2002.
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