兰州大学机构库 >物理科学与技术学院
界面修饰提升有机场效应管光电性能研究
Alternative TitleEnhanced optical and electrical performances of organic field-effect transistors via interfacial modifications
杜丽丽
Thesis Advisor彭应全
2017-04-05
Degree Grantor兰州大学
Place of Conferral兰州
Degree Name硕士
Keyword有机场效应晶体管 界面修饰 中间带隙 宽谱光响应 互补吸收谱
Abstract

有机场效应晶体管(organic field-effect transistor,OFET)具有轻质、柔性、大面积制备以及成本较低等优点,已经吸引了广泛的关注。此外,由于有机半导体的光谱可调性和长的光载流子寿命,使得OFET器件在先进的光电转换应用方面极具魅力。提升OFET光电特性和工作寿命的方法,除了选用合适的有机半导体材料和创新的器件结构外,界面修饰也是一个关键的因素。

本论文首先综述了OFET近几十年的研究进展、应用领域、研究现状以及目前所面临的挑战等。然后介绍了OFET的基本结构、工作原理、制备材料及工艺和性能参数等。针对OFET目前光电性能较低、稳定性较差的问题,本论文的工作主要围绕界面修饰提升OFET光电性能和稳定性研究展开。具体工作如下:

(1)通过在载流子传输界面(SiO2/C60)引入PVA和OTS,使得C60活性薄膜的晶粒更大,晶界更少。另一方面,在载流子注入界面(Al/C60)引入BCP,使注入界面产生一个辅助电子注入的中间带隙机制。通过以上研究表明,界面修饰提升了C60薄膜结晶性,同时降低了电子注入势垒,从而增大了OFET的载流子迁移率和开关电流比,减小了亚阈值摆幅,并且显著提高了器件的光响应度和外量子效率等。经过协同界面修饰的OFET在50 V栅压下,获得的最大迁移率和最高光响应度分别达到0.31 cm2V-1s-1和234 A/W,这一指标甚至高于目前商业应用的氮化镓紫外光敏二极管(GUVA-S12SD)。同时也提升了器件的空气稳定性。(2)我们设计了一种基于C60/AlClPc异质结的高性能宽谱有机光敏晶体管。该精巧的设计考虑了有关材料、界面和能级等因素,从而获得了具有高效激子解离的界面和互补的光谱吸收范围。最终实现了94.4 A/W的超高光响应度、26066%的外量子效率和1.5´1013 Jones的探测灵敏度,同时器件也具有高频信号探测能力。上述指标比得上甚至优于目前商业应用的无机光探测器。

Other Abstract

Organic field-effect transistor (OFET) is a promising electronic device with substantial attention due to its lightweight, flexibility, large-scale yields, and low cost. In addition, spectral tunability and long photocarrier lifetime for organic active materials make it highly attractive for advanced optoelectronic device applications. For improving the OFET performance and lifetime, interfacial modification is also a key factor in addition to the selection of appropriate organic semiconductors and innovative device structure.

This thesis firstly reviewed the research progress, application fields, research status and current challenges of OFETs in recent decades, and then introduced the basic structure, working principle, materials and preparation process, and performance parameters of OFET. Aiming at the low performance and poor stability, we focused on the improvement of OFET performance and stability by interfacial modifications. The main work is as follows:

(1) The introduction of PVA and OTS at the carrier transfer interface (SiO2/C60) resulted in the fact that the deposited C60 films on PVA/OTS successive-modified SiO2 substrate were highly dense polycrystalline and uniform with larger crystalline grain and less grain boundary. On the other hand, a gap state assisted electron injection mechanism was proposed by inserting a BCP buffer layer at the charge injection interface (Al/C60). The above studies showed that the interfacial modification enhanced the crystallinity of the C60 thin film and reduced the electron injection barrier, which increased the carrier mobility and on-off current ratio, reduced the subthreshold slope, and significantly improved the photoresponsivity and external quantum efficiency of OFET. The maximum mobility and highest photoresponsivity of synergistic interfacial modifications device can reach up to 0.31 cm2V-1s-1 and 234 A/W at 50 V gate voltage, respectively, which are even higher than those of commercially available gallium nitride UV photodiodes (GUVA-S12SD). Meanwhile, the interfacial modifications also improved the device’s air stability.(2) We designed a high-performance broadband organic phototransistor based on C60/AlClPc heterojunction. This elaborate design, with respect to the materials, interfaces and energy levels, led to a high-efficiency exciton-dissociation interface and complementary spectral absorption. And the corresponding photodetector obtained an ultrahigh photoresponsivity of 94.4 A/W, the highest detectivity ~1.5´1013 Jones combined with external quantum efficiency of 26066%, and the ability to measure high-frequency signals. These parameters are comparable or even superior to commercially available inorganic photodetectors.

URL查看原文
Language中文
Document Type学位论文
Identifierhttps://ir.lzu.edu.cn/handle/262010/229716
Collection物理科学与技术学院
Recommended Citation
GB/T 7714
杜丽丽. 界面修饰提升有机场效应管光电性能研究[D]. 兰州. 兰州大学,2017.
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