兰州大学机构库 >物理科学与技术学院
基于稀土酞菁配合物的光敏有机场效应管—材料合成到器件制备
Alternative TitlePhotosensitive Organic Field-effect Transistors Based on Rare Earth Phthalocyanine:From Material Synthesis to Device Preparation
汤瑜
Thesis Advisor彭应全
2014-05-31
Degree Grantor兰州大学
Place of Conferral兰州
Degree Name硕士
Keyword稀土酞菁光敏材料 光敏有机场效应晶体管 光/暗电流比 光响应度
Abstract有机半导体材料与器件的应用研究是有机电子学领域的研究热点,目前已取得了可喜的研究成果。其中,有机场效应晶体管(OFET)由于其功耗低、重量轻以及可大面积生产而具有更广泛的应用前景。新兴的光敏有机场效应晶体管(PhotOFET)作为OFET的重要分支之一,由于具有高灵敏度和低噪声系数,成为一种新型的光探测器,从而受到广泛的关注和研究。本论文围绕稀土酞菁光敏材料的制备及其在PhotOFET器件中的应用两个方面开展了以下的工作: (1).合成了稀土酞菁光敏有机半导体材料酞菁钕(NdPc2)和酞菁铒(ErPc2)。对薄膜的紫外-可见光吸收测试表明,NdPc2和ErPc2对红光都有较强的吸收,它们的薄膜最大光吸收系数分别可达1.4×105 cm-1和1.1×105 cm-1。因此,NdPc2和ErPc2可作为良好的红光光敏材料应用于有机红光探测器中。 (2).采用上述合成的两种有机半导体材料在Si/SiO2衬底上分别成功制备了NdPc2和ErPc2单层的PhotOFET。其中,NdPc2单层PhotOFET获得的最大光/暗电流比为104;在入射光强为0.004 mW/cm2,栅压-100 V、漏压-50 V条件下,光响应度达到7.04 A/W。 (3).为了提升基于酞菁钕的PhotOFET的光敏性能,进一步引入高迁移率的n型有机半导体材料C60作为沟道传输层,制备了C60/NdPc2平面异质结结构的PhotOFET,器件最大光/暗电流比可达到105;在入射光强为0.004 mW/cm2,栅压为100 V、漏压为50 V条件下,光响应度可达214.8 A/W。由此可见,搭配高迁移沟道材料的C60/NdPc2异质结PhotOFET具有更好的光敏特性。 (4).制备了基于ErPc2为光敏层的CuPc/ErPc2平面异质结器件。在入射光照强度为5 mW/cm2,器件达到的最大光灵敏度约为102;当栅压为-100 V、漏压为-50 V时,器件的光响应度为0.16 A/W。
Other AbstractThe application of organic semiconductor materials and devices is a hot research topic in the field of organic electronics and the gratifying results have been achieved. Due to its low power consumption, light weight and can be produced in large area, Organic Field-effect transistors (OFET) have wide application prospect. As one of the important branches of OFET, Photosensitive field-effect transistor (PhotOFET), which with high sensitivity and low noise factor, have become a new type of light detector and have widely attention and study. This paper has carried out the following work around two aspects, such as the preparation of rare earth phthalocyanine photosensitive materials and its application in PhotOFET device. 1. The rare earth phthalocyanine photosensitive organic semiconductor materials, Phthalocyanine neodymium (NdPc2) and phthalocyanine erbium (ErPc2),were synthesized. The tests of ultraviolet-visible absorption of thin film show that NdPc2 and ErPc2 have strong absorption on red light and the maximum value of light absorption coefficient were 1.4×105 cm-1 and 1.1×105 cm-1 respectively. Therefore, as the ideal red light photosensitive materials, NdPc2 and ErPc2 can be used in organic red light detector. 2. Two kinds of organic semiconductor materials synthesized above were used in the preparation of NdPc2 and ErPc2 single-layer photOFET respectively based on the Si/SiO2 substrate. Among them, the maximum value of light/dark current ratio of the NdPc2 single-layer PhotOFET is 104 and the photoresponsivity is 7.04 A/W which with the incident light intensity of 0.004 mW/cm2 when gate voltage is -50 V and drain voltage is -100 V. 3. In order to improve the photosensitive properties of photOFET based on phthalocyanine neodymium, we further introduce the high mobility of n type organic semiconductor material, C60, as channel transport layer and prepare the C60/NdPc2 heterojunction PhotOFET. The maximum value of light/dark current ratio of device can be up to 105. Also, the photoresponsivity of device is 214.8 A/W with the same incident light intensity when gate voltage is 50 V and drain voltage is 100 V. Thus, collocation of C60 with high mobility materials makes C60/NdPc2 heterojunction PhotOFET has better photosensitive properties. 4. The CuPc/ErPc2 plane-heterojunction device based on ErPc2 as photosensitive layer was also prepared in experiments. With the incident light intensity of 5 mw/cm2, the maximum of light/dark current ratio of de...
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Language中文
Document Type学位论文
Identifierhttps://ir.lzu.edu.cn/handle/262010/229767
Collection物理科学与技术学院
Recommended Citation
GB/T 7714
汤瑜. 基于稀土酞菁配合物的光敏有机场效应管—材料合成到器件制备[D]. 兰州. 兰州大学,2014.
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