|Alternative Title||Study on Red-Light Organic Photodiodes Based on NdPc2 and ZnPc
|Place of Conferral||兰州
（1）对NdPc2<下标!>（酞菁钕）/C60光敏二极管中NdPc2<下标!>层的厚度进行了优化。结果表明，当NdPc2<下标!>层厚度为20 nm时，在反向偏压为5 V条件下，器件的暗电流为3151.16μA，光响应度为1.92 A/W。
（2）对NdPc2<下标!>(20 nm)/C60(50 nm)光敏二极管的阳极和阴极分别采用厚度均为1nm的MoO3<下标!>（氧化钼）和LiF（氟化锂）修饰后，器件的暗电流降低19%。
（3）对NdPc2<下标!>(50 nm)/C60(50 nm)平面异质结光敏二极管进行了退火处理。结果表明，随着退火温度的升高，器件的暗电流逐渐减小，但光响应度也逐渐降低。
（4）制备了ZnPc（酞菁锌,15 nm）/C60（15 nm）超晶格结构光敏二极管，结果表明，随着超晶格周期数的增加，光暗电流比增大，但光响应度减小。超晶格周期数为10，反向偏压为5 V时，获得的暗电流为0.76 μA，光暗电流比为2101.99，光响应度为0.18 A/W。|
|Other Abstract||Photodetectors are one of optoelectronic devices which converting the incident light signal into electrical signal. They have been widely applied in the defence science & technology and production & living. Organic photodetectors include organic photodiodes (OPD), photoresponsive organic field-effect transistors, organic photo-resistance and so on. Organic photodiodes have a broad application prospect due to their advantages，such as flexible choice of material, multiple preparation methods, broad response spectrum and adjustable working wavelength.
In this thesis, we studied organic planar heterojunction photodiodes and organic superlattice photodiodes based on phthalocyanine neodymium (NdPc2<下标!>) and phthalocyanine zinc (ZnPc).
i. The NdPc2<下标!> film thickness of the OPD based on NdPc2/C60 planar heterojunction (NdPc2<下标!>/C60-OPD) was optimized and found to be about 20 nm. When a reverse biased of 5 V was applied to the device, a dark current of 3151.16 μA and a photoresponsivity of 1.92 A/W were obtained.
ii. The dark current of NdPc2 <下标!>(20 nm)/C60(50 nm)-OPD was decreased by 19% after the anode and cathode of the device were modified by MoO3 <下标!>(molybdenum oxide,1 nm) and LiF (lithium fluoride ,1 nm), respectively.
iii. For the NdPc2<下标!>(50 nm)/C60(50 nm)-OPD, both the dark current and the photoresponsivity of the devices were decreased with the annealed temperature increasing.
iv. The superstructure photodiodes based on ZnPc (15 nm)/C60 (15 nm) were fabricated. The maximum ratio of the photocurrent to the dark current of the device was increased with the periodicity of superstructure increasing, but the photoresponsivity of the device was decreased. When the periodicity of superstructure was 10 cycles and a reverse biased of 5V was applied to the device, a dark current of 0.76 μA, the maximum ratio of the photocurrent to the dark current of 2101.99 and a photoresponsivity of 0.18 A/W were achieved.|
郑挺才. 基于酞菁钕和酞菁锌的红光有机光敏二极管研究[D]. 兰州. 兰州大学,2014.
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.