| Determination of band alignment in two-dimensional h-BN/WS2 van der waals heterojunction by X-ray photoelectron spectroscopy | |
Xing, Shu'an1; Zhao, Guijuan1; Xu, Yan1; Wang, J(王杰)1 ; Li, XS(李训栓)1,2; Yang, Wenge1; Liu, GP(刘贵鹏)1,2; Yang, JH(杨建红)1 | |
| 2021-02-15 | |
| Source Publication | Journal of Alloys and Compounds
 |
| ISSN | 09258388 |
| Volume | 854 |
| Abstract | We have fabricated two-dimensional h-BN/WS2 van der Waals heterojunctions by stacking h-BN and WS2 monolayers, and experimentally measured the valence band offset (VBO) of h-BN/WS2 heterojunction by X-ray photoelectron spectroscopy (XPS). The h-BN and WS2 monolayers band gaps and the measured value of VBO were used to determine the conduction band offset (CBO). The measurement results of VBO and CBO are 3.39 ± 0.15 eV and 0.57 ± 0.15 eV, respectively, revealing a type-I band alignment. It is urgent to measure the band alignment parameters of h-BN/WS2 heterojunctions for analyzing and designing h-BN/WS2 based devices. © 2020 Elsevier B.V. |
| Keyword | Alignment Energy gap Heterojunctions Monolayers Photoelectrons Photons Tungsten compounds Van der Waals forces X ray photoelectron spectroscopyBand alignments Conduction band offset Measured values Type i band alignments Valence band offsets Van der waals |
| Publisher | Elsevier Ltd |
| DOI | 10.1016/j.jallcom.2020.157301 |
| Indexed By | EI |
| Language | 英语 |
| EI Accession Number | 20204009265410 |
| EI Keywords | Boron nitride |
| EI Classification Number | 601.1 Mechanical Devices ; 714.2 Semiconductor Devices and Integrated Circuits ; 804.2 Inorganic Compounds ; 931.3 Atomic and Molecular Physics |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | https://ir.lzu.edu.cn/handle/262010/440598 |
| Collection | 资源环境学院 物理科学与技术学院 |
| Corresponding Author | Zhao, Guijuan |
| Affiliation | 1.School of Physical Science and Technology, Lanzhou University, Lanzhou; Gansu; 730000, China; 2.Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou; Gansu; 730000, China |
| First Author Affilication | Lanzhou University |
| Corresponding Author Affilication | Lanzhou University |
| Recommended Citation GB/T 7714 | Xing, Shu'an,Zhao, Guijuan,Xu, Yan,et al. Determination of band alignment in two-dimensional h-BN/WS2 van der waals heterojunction by X-ray photoelectron spectroscopy[J]. Journal of Alloys and Compounds,2021,854. |
| APA | Xing, Shu'an.,Zhao, Guijuan.,Xu, Yan.,Wang, Jie.,Li, Xunshuan.,...&Yang, Jianhong.(2021).Determination of band alignment in two-dimensional h-BN/WS2 van der waals heterojunction by X-ray photoelectron spectroscopy.Journal of Alloys and Compounds,854. |
| MLA | Xing, Shu'an,et al."Determination of band alignment in two-dimensional h-BN/WS2 van der waals heterojunction by X-ray photoelectron spectroscopy".Journal of Alloys and Compounds 854(2021). |
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