| High Curie Temperature Ferromagnetism and High Hole Mobility in Tensile Strained Mn-Doped SiGe Thin Films | |
| Wang, Huanming1; Sun, Sen2; Lu, Jiating1; Xu, Jiayin1; Lv, Xiaowei3; Peng, Yong3; Zhang, Xi1; Wang, Yuan2; Xiang, Gang1 | |
| 2020-07-15 | |
| Source Publication | ADVANCED FUNCTIONAL MATERIALS Impact Factor & Quartile |
| ISSN | 1616-301X |
| Volume | 30Issue:38 |
| Abstract | Diluted magnetic semiconductors based on group-IV materials are desirable for spintronic devices compatible with current silicon technology. In this work, amorphous Mn-doped SiGe thin films are first fabricated on Ge substrates by radio frequency magnetron sputtering and then crystallized by rapid thermal annealing (RTA). After the RTA, the samples become ferromagnetic semiconductors, in which the Curie temperature increases with increasing Mn doping concentration and reaches 280 K with 5% Mn concentration. The data suggest that the ferromagnetism comes from the hole-mediated process and is enhanced by the tensile strain in the SiGe crystals. Meanwhile, the Hall effect measurement up to 33 T to eliminate the influence of anomalous Hall effect reveals that the hole mobility of the annealed samples is greatly enhanced and the maximal value is approximate to 1000 cm(2)V(-1)s(-1), owing to the tensile strain-induced band structure modulation. The Mn-doped SiGe thin films with high Curie temperature ferromagnetism and high hole mobility may provide a promising platform for semiconductor spintronics. |
| Keyword | diluted magnetic semiconductors ferromagnetism hole mobility Mn-doped SiGe strain |
| DOI | 10.1002/adfm.202002513 |
| Indexed By | SCIE ; EI |
| Language | 英语 |
| Funding Project | National Key Research and Development Program of China[2017YFB0405702] ; National Natural Science Foundation of China[51671137] |
| WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS Subject | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:000549725000001 |
| Publisher | WILEY-V C H VERLAG GMBH |
| EI Accession Number | 20202908949100 |
| EI Keywords | Si-Ge alloys |
| EI Classification Number | 537.1 Heat Treatment Processes ; 543.2 Manganese and Alloys ; 701.2 Magnetism: Basic Concepts and Phenomena ; 712.1 Semiconducting Materials ; 712.1.1 Single Element Semiconducting Materials ; 931.1 Mechanics ; 933.3 Electronic Structure of Solids |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | https://ir.lzu.edu.cn/handle/262010/440854 |
| Collection | 物理科学与技术学院 |
| Corresponding Author | Xiang, Gang |
| Affiliation | 1.Sichuan Univ, Coll Phys, Chengdu 610064, Peoples R China 2.Sichuan Univ, Inst Nucl Sci & Technol, Minist Educ, Key Lab Radiat Phys & Technol, Chengdu 610064, Peoples R China 3.Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China |
| Recommended Citation GB/T 7714 | Wang, Huanming,Sun, Sen,Lu, Jiating,et al. High Curie Temperature Ferromagnetism and High Hole Mobility in Tensile Strained Mn-Doped SiGe Thin Films[J]. ADVANCED FUNCTIONAL MATERIALS,2020,30(38). |
| APA | Wang, Huanming.,Sun, Sen.,Lu, Jiating.,Xu, Jiayin.,Lv, Xiaowei.,...&Xiang, Gang.(2020).High Curie Temperature Ferromagnetism and High Hole Mobility in Tensile Strained Mn-Doped SiGe Thin Films.ADVANCED FUNCTIONAL MATERIALS,30(38). |
| MLA | Wang, Huanming,et al."High Curie Temperature Ferromagnetism and High Hole Mobility in Tensile Strained Mn-Doped SiGe Thin Films".ADVANCED FUNCTIONAL MATERIALS 30.38(2020). |
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| Wang-2020-High Curie（1779KB） | 期刊论文 | 出版稿 | 开放获取 | CC BY-NC-SA | View Application Full Text |
