| Percolation theory based model of conduction mechanism and characteristic contradiction in ZnO RRAM | |
| Qi, Haiqing1; Hu, Cong1; Wang, Yanyong2; Ali, Salamat1; Hu, Junjie1; Bai, Na1; Wang, Qi1; Qi, Jing1; He, Deyan1 | |
| 2021-11-22 | |
| Source Publication | APPLIED PHYSICS LETTERS Impact Factor & Quartile |
| ISSN | 0003-6951 |
| Volume | 119Issue:21 |
| Abstract | Resistive random access memory (RRAM) has been intensively investigated for nearly two decades. However, RRAM has not been applied widely in the market because of the poor characteristics, such as reliability and uniformity, which could be improved by the accurate comprehension of the mechanism. In this paper, a model based on percolation theory is proposed to simulate the I-V characteristics of ZnO resistive switching memory. It demonstrates that three different conductions of space charge limited current, Poole-Frenkel effect, and thermionic emission are determined by the relationship between the oxygen vacancy concentration and the bias. Furthermore, this model well explains the effect of conductive filaments' diameter and compliance current on the I-V characteristics of ZnO resistive switching memory, which demonstrates the rationality of the percolation model.& nbsp;Published under an exclusive license by AIP Publishing |
| Publisher | AIP Publishing |
| DOI | 10.1063/5.0069763 |
| Indexed By | EI ; SCOPUS ; SCIE |
| Language | 英语 |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| WOS ID | WOS:000723285900004 |
| Original Document Type | Article |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | https://ir.lzu.edu.cn/handle/262010/470681 |
| Collection | 物理科学与技术学院 |
| Corresponding Author | Qi, Jing |
| Affiliation | 1.Lanzhou Univ, Sch Mat & Energy, Key Lab Special Funct Mat & Struct Design, Lanzhou 730000, Peoples R China; 2.Vimicro Technol Corp, Zhuhai 519031, Peoples R China |
| Recommended Citation GB/T 7714 | Qi, Haiqing,Hu, Cong,Wang, Yanyong,et al. Percolation theory based model of conduction mechanism and characteristic contradiction in ZnO RRAM[J]. APPLIED PHYSICS LETTERS,2021,119(21). |
| APA | Qi, Haiqing.,Hu, Cong.,Wang, Yanyong.,Ali, Salamat.,Hu, Junjie.,...&He, Deyan.(2021).Percolation theory based model of conduction mechanism and characteristic contradiction in ZnO RRAM.APPLIED PHYSICS LETTERS,119(21). |
| MLA | Qi, Haiqing,et al."Percolation theory based model of conduction mechanism and characteristic contradiction in ZnO RRAM".APPLIED PHYSICS LETTERS 119.21(2021). |
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