|Implementation of a full Wheatstone-bridge GMR sensor by utilizing spin-orbit torque induced magnetization switching in synthetic antiferromagnetic layer|
|Luo, Keliu; Guo, Yonghai; Li, Wangda; Zhang, Bo; Wang, Bo; Cao, JW(曹江伟)|
|Source Publication||JOURNAL OF APPLIED PHYSICS
Impact Factor & Quartile|
|Abstract||A giant magnetoresistance (GMR) sensor with a Wheatstone bridge structure and an out-of-plane linear response was developed. The spin-valve structure consists of a synthetic antiferromagnetic [(Co/Pt)n/Ru/(Pt/Co)n] reference layer with perpendicular magnetic anisotropy, a Cu spacer layer, and a Co-free layer with in-plane easy magnetization. By utilizing the spin-orbit torque induced magnetization switching in the synthetic antiferromagnetic layer, the magnetization of the reference layers in the adjacent bridge arms is set to the opposite direction, achieving a GMR sensor with a full Wheatstone bridge structure. The sensor exhibits linear response to the out-of-plane magnetic field with adjustable dynamic ranges from hundreds to thousands of Oe, depending on the thickness of the Co-free layer. A similar Wheatstone bridge sensor consisting of magnetic tunnel junctions was also proposed. The sensor with out-of-plane linear response may have promising applications in three-dimensional magnetic field detection and current sensing field. © 2023 Author(s).|
|Publisher||American Institute of Physics Inc.
|WOS Research Area||Physics
|WOS Subject||Physics, Applied
|EI Accession Number||20231814029024
|EI Classification Number||701.2 Magnetism: Basic Concepts and Phenomena
; 931.2 Physical Properties of Gases, Liquids and Solids
|Original Document Type||Journal article (JA)
|Corresponding Author||Cao, Jiangwei|
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou; 730000, China
|First Author Affilication||School of Physical Sicence and Technology
|Corresponding Author Affilication||School of Physical Sicence and Technology
Luo, Keliu,Guo, Yonghai,Li, Wangda,et al. Implementation of a full Wheatstone-bridge GMR sensor by utilizing spin-orbit torque induced magnetization switching in synthetic antiferromagnetic layer[J].
JOURNAL OF APPLIED PHYSICS,2023,133(15).
Luo, Keliu,Guo, Yonghai,Li, Wangda,Zhang, Bo,Wang, Bo,&Cao, Jiangwei.(2023).Implementation of a full Wheatstone-bridge GMR sensor by utilizing spin-orbit torque induced magnetization switching in synthetic antiferromagnetic layer.JOURNAL OF APPLIED PHYSICS,133(15).
Luo, Keliu,et al."Implementation of a full Wheatstone-bridge GMR sensor by utilizing spin-orbit torque induced magnetization switching in synthetic antiferromagnetic layer".JOURNAL OF APPLIED PHYSICS 133.15(2023).
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