| Implementation of a full Wheatstone-bridge GMR sensor by utilizing spin-orbit torque induced magnetization switching in synthetic antiferromagnetic layer | |
Luo, Keliu; Guo, Yonghai; Li, Wangda; Zhang, Bo; Wang, Bo; Cao, JW(曹江伟) | |
| 2023-04-21 | |
| Source Publication | JOURNAL OF APPLIED PHYSICS Impact Factor & Quartile |
| ISSN | 0021-8979 |
| Volume | 133Issue:15 |
| page numbers | 8 |
| Abstract | A giant magnetoresistance (GMR) sensor with a Wheatstone bridge structure and an out-of-plane linear response was developed. The spin-valve structure consists of a synthetic antiferromagnetic [(Co/Pt)n/Ru/(Pt/Co)n] reference layer with perpendicular magnetic anisotropy, a Cu spacer layer, and a Co-free layer with in-plane easy magnetization. By utilizing the spin-orbit torque induced magnetization switching in the synthetic antiferromagnetic layer, the magnetization of the reference layers in the adjacent bridge arms is set to the opposite direction, achieving a GMR sensor with a full Wheatstone bridge structure. The sensor exhibits linear response to the out-of-plane magnetic field with adjustable dynamic ranges from hundreds to thousands of Oe, depending on the thickness of the Co-free layer. A similar Wheatstone bridge sensor consisting of magnetic tunnel junctions was also proposed. The sensor with out-of-plane linear response may have promising applications in three-dimensional magnetic field detection and current sensing field. © 2023 Author(s). |
| Keyword | Antiferromagnetism Bridge circuits Giant magnetoresistance Magnetic anisotropy Magnetic devices Tunnel junctions Tunnelling magnetoresistance Antiferromagnetic layers Bridge structures Induced magnetizations Linear response Magnetization switching Magnetoresistance sensors Out-of-plane Spin orbits Synthetic antiferromagnetic Wheatstone's bridge |
| Publisher | American Institute of Physics Inc. |
| DOI | 10.1063/5.0137559 |
| Indexed By | EI ; SCIE |
| Language | 英语 |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| WOS ID | WOS:001052369100005 |
| EI Accession Number | 20231814029024 |
| EI Keywords | Magnetization |
| EI Classification Number | 701.2 Magnetism: Basic Concepts and Phenomena ; 931.2 Physical Properties of Gases, Liquids and Solids |
| Original Document Type | Journal article (JA) |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | https://ir.lzu.edu.cn/handle/262010/529439 |
| Collection | 物理科学与技术学院 |
| Corresponding Author | Cao, Jiangwei |
| Affiliation | Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou; 730000, China |
| First Author Affilication | School of Physical Sicence and Technology |
| Corresponding Author Affilication | School of Physical Sicence and Technology |
| Recommended Citation GB/T 7714 | Luo, Keliu,Guo, Yonghai,Li, Wangda,et al. Implementation of a full Wheatstone-bridge GMR sensor by utilizing spin-orbit torque induced magnetization switching in synthetic antiferromagnetic layer[J]. JOURNAL OF APPLIED PHYSICS,2023,133(15). |
| APA | Luo, Keliu,Guo, Yonghai,Li, Wangda,Zhang, Bo,Wang, Bo,&Cao, Jiangwei.(2023).Implementation of a full Wheatstone-bridge GMR sensor by utilizing spin-orbit torque induced magnetization switching in synthetic antiferromagnetic layer.JOURNAL OF APPLIED PHYSICS,133(15). |
| MLA | Luo, Keliu,et al."Implementation of a full Wheatstone-bridge GMR sensor by utilizing spin-orbit torque induced magnetization switching in synthetic antiferromagnetic layer".JOURNAL OF APPLIED PHYSICS 133.15(2023). |
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