| The Discovery of a High-Mobility Two-Dimensional Bismuth Oxyselenide Semiconductor and Its Application in Nonvolatile Neuromorphic Devices | |
| 2023-06-01 | |
| Online publication date | 2023-06 |
| Source Publication | ACS Nano Impact Factor & Quartile |
| ISSN | 1936-0851 |
| Volume | 17Issue:11Pages:10783-10791 |
| page numbers | 9 |
| Abstract | The development of two-dimensional (2D) electronics isalways accompaniedby the discovery of 2D semiconductors with high mobility and specificcrystal structures, which may bring revolutionary breakthrough onproof-of-concept devices and physics. Here, Bi3O2.5Se2, a 2D bismuth oxyselenide semiconductor with non-neutrallayered crystal structure is discovered. Ultrathin Bi3O2.5Se2 films are readily synthesized by chemicalvapor deposition, displaying tunable band gaps and high room-temperaturefield-effect mobility of >220 cm(2) V-1 s(-1). Moreover, the as-synthesized Bi3O2.5Se2 nanoplates were fabricated into top-gatedtransistors with a simple device configuration, whose carrier densitycan be reversibly regulated in the range of 10(14) cm(-2) just by a facile method of electrostatic doping atroom temperature. These features enable it to be functionalized intononvolatile synaptic transistors with ultralow operating energy consumption(similar to 0.5 fJ), high repeatability, low operating voltage (0.1 V),and long retention time. Our work extends the family of bismuth oxyselenide2D semicondutors. |
| Keyword | 2D semiconductor Bi3O2.5Se2 non-neutral layered structure electrostatic doping nonvolatile memory |
| Publisher | AMER CHEMICAL SOC |
| DOI | 10.1021/acsnano.3c02263 |
| Indexed By | SCIE |
| Language | 英语 |
| WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| WOS Subject | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| WOS ID | WOS:001006449100001 |
| Original Document Type | Article |
| PMID | 37259985 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | https://ir.lzu.edu.cn/handle/262010/530534 |
| Collection | 兰州大学 |
| Corresponding Author | Zhou, Zhengyang; Wu, Jinxiong |
| Affiliation | 1.Nankai Univ, Smart Sensor Interdisciplinary Sci Ctr, Sch Mat Sci & Engn, Tianjin Key Lab Rare Earth Mat & Applicat,Ctr Rare, Tianjin 300350, Peoples R China; 2.Lanzhou Univ, Electron Microscopy Ctr, Sch Mat & Energy, Lanzhou 730000, Peoples R China; 3.Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China; 4.Nanjing Univ, Sch Chem & Chem Engn, Nanjing 210093, Peoples R China; 5.Chongqing Univ, Ctr Quantum Mat & Devices, Chongqing 401331, Peoples R China; 6.Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China; 7.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine M, Shanghai 200050, Peoples R China |
| Recommended Citation GB/T 7714 | He, Yuyu,Xu, Qi,Dong, Xinyue,et al. The Discovery of a High-Mobility Two-Dimensional Bismuth Oxyselenide Semiconductor and Its Application in Nonvolatile Neuromorphic Devices[J]. ACS Nano,2023,17(11):10783-10791. |
| APA | He, Yuyu.,Xu, Qi.,Dong, Xinyue.,Liu, Junhao.,Li, Li.,...&Wu, Jinxiong.(2023).The Discovery of a High-Mobility Two-Dimensional Bismuth Oxyselenide Semiconductor and Its Application in Nonvolatile Neuromorphic Devices.ACS Nano,17(11),10783-10791. |
| MLA | He, Yuyu,et al."The Discovery of a High-Mobility Two-Dimensional Bismuth Oxyselenide Semiconductor and Its Application in Nonvolatile Neuromorphic Devices".ACS Nano 17.11(2023):10783-10791. |
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