| Ion-irradiation-induced field-free magnetization switching in synthetic antiferromagnets by spin–orbit torque | |
He, Xiaodong1; Sheng, Yanbin2,3; Yun, Jijun1,4; Zhang, Jianrong1; Xie, Hongfei1; Ren, Yang5; Cui, BS(崔宝山)1 ; Zuo, YL(左亚路)1; Xi, L(席力)1 | |
| 2023-09-15 | |
| Online publication date | 2023-07 |
| Source Publication | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS Impact Factor & Quartile |
| ISSN | 0304-8853 |
| Volume | 582 |
| Abstract | The perpendicularly magnetized synthetic antiferromagnets (SAFs) are expected to be ideal materials for magnetic random-access memory (MRAM) due to the low cross-talk noise and the high recording density. Normally, an in-plane magnetic field is required to break the inversion symmetry for deterministic magnetization switching in perpendicular SAFs by SOTs, which is undesirable for applications. In this work, the ion-irradiation method was adopted to engineer the interface of a perpendicularly magnetized Pt/Co/Pt/Ru/Pt/Co/Ta SAF to achieve the filed-free switching of the magnetization via the in-plane magnetization component of top-Co layer, which provides an in-plane effective field to bottom-Co layer and breaks the symmetry. Furthermore, with the increase of ion fluence, the critical switching current density decreases, which is consistent with the increase of spin Hall angle induced by ion-irradiation measured by the harmonic Hall voltage method. These results indicate that ion irradiation is a promising approach for realizing field-free magnetization switching in SAFs driven by SOTs and has potential application in SOT-based spintronic devices. © 2023 Elsevier B.V. |
| Keyword | Ions Magnetization MRAM devices Crosstalk noise Field-free magnetization switching In-plane magnetic fields Induced field Ions irradiation Magnetic random access memory Magnetization switching Recording density Spin orbits Synthetic antiferromagnets |
| Publisher | Elsevier B.V. |
| DOI | 10.1016/j.jmmm.2023.170977 |
| Indexed By | EI ; SCIE |
| Language | 英语 |
| WOS Research Area | Materials Science ; Physics |
| WOS Subject | Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| WOS ID | WOS:001038249600001 |
| EI Accession Number | 20232814382282 |
| EI Keywords | Ion bombardment |
| EI Classification Number | 701.2 Magnetism: Basic Concepts and Phenomena ; 722.1 Data Storage, Equipment and Techniques ; 932.1 High Energy Physics |
| Original Document Type | Journal article (JA) |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | https://ir.lzu.edu.cn/handle/262010/532190 |
| Collection | 物理科学与技术学院 核科学与技术学院 |
| Corresponding Author | Zuo, Yalu; Xi, Li |
| Affiliation | 1.Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou; 730000, China; 2.Institute of Modern Physics, Chinese Academy of Sciences(CAS), Lanzhou; 730000, China; 3.School of Nuclear Science and Technology, Lanzhou University, Lanzhou; 730000, China; 4.Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry Under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an; 710072, China; 5.School of Physics and Astronomy and Yunnan Key Laboratory for Quantum Information, Yunnan University, Kunming; 650091, China |
| First Author Affilication | School of Physical Sicence and Technology |
| Corresponding Author Affilication | School of Physical Sicence and Technology |
| Recommended Citation GB/T 7714 | He, Xiaodong,Sheng, Yanbin,Yun, Jijun,et al. Ion-irradiation-induced field-free magnetization switching in synthetic antiferromagnets by spin–orbit torque[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,2023,582. |
| APA | He, Xiaodong.,Sheng, Yanbin.,Yun, Jijun.,Zhang, Jianrong.,Xie, Hongfei.,...&Xi, Li.(2023).Ion-irradiation-induced field-free magnetization switching in synthetic antiferromagnets by spin–orbit torque.JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,582. |
| MLA | He, Xiaodong,et al."Ion-irradiation-induced field-free magnetization switching in synthetic antiferromagnets by spin–orbit torque".JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 582(2023). |
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