兰州大学机构库 >物理科学与技术学院
Heterostructure engineering of NiO foam /In2S3 film for high-performance ethylene glycol gas sensors
Wang, Xukun1; Zhang, Wenjian2; Wang, Xinge1; Li, Xijuan1; Sui, Xinyi1; Jiang, Haiqing1; Liu, Guo1; Li, Bingsheng3; Sheng, Yanbin4; Zhou, JY(周金元)1; Xie, EQ(谢二庆)1; Zhang, ZX(张振兴)1
2023-10-01
Online publication date2023-06
Source PublicationSENSORS AND ACTUATORS B-CHEMICAL   Impact Factor & Quartile
ISSN0925-4005
Volume392
page numbers8
AbstractEthylene glycol, widely used as antifreeze for planes and motor cars, is odorless and harmful to humans; thus, high-performance ethylene glycol gas sensors are highly demanded. Herein, a type-II heterostructure of p-type nickel oxide foam/ n-type indium sulfide (NIS) was prepared for ethylene glycol gas sensing. The assembled NIS sensor exhibits a unique response (Rg/Ra=180.39) to 100 ppm ethylene glycol at a low temperature of 150 and a fast response/ recovery time (11.43 s/ 6.16 s), as well as excellent repeatability and long-term stability. The excellent gas-sensitive performance of the NIS sensors can be attributed to the formation of p-NiO/n-In2S3 heterojunctions resulting in a large change in the potential barrier, which leads to an increased sensing response. These results suggest that elaborate heterostructure engineering of NiO can potentially achieve highly sensitive ethylene glycol gas sensors. © 2023 Elsevier B.V.
KeywordChemical sensors Ethylene Ethylene glycol Gas detectors Gases Heterojunctions Nickel oxide Nickel sulfates Polyols Temperature Fast response Gas sensing Gas-sensors Lows-temperatures Motor cars NiO foam P-type Performance Response/recovery time Type II
PublisherElsevier B.V.
DOI10.1016/j.snb.2023.134110
Indexed ByEI ; SCIE
Language英语
WOS Research AreaChemistry ; Electrochemistry ; Instruments & Instrumentation
WOS SubjectChemistry, Analytical ; Electrochemistry ; Instruments & Instrumentation
WOS IDWOS:001058365100001
EI Accession Number20232414250110
EI KeywordsSulfur compounds
EI Classification Number641.1 Thermodynamics ; 714.2 Semiconductor Devices and Integrated Circuits ; 801 Chemistry ; 804.1 Organic Compounds ; 804.2 Inorganic Compounds ; 914.1 Accidents and Accident Prevention ; 943.3 Special Purpose Instruments
Original Document TypeJournal article (JA)
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttps://ir.lzu.edu.cn/handle/262010/532192
Collection物理科学与技术学院
Corresponding AuthorZhang, Zhenxing
Affiliation
1.Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou; 730000, China;
2.School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan; 430074, China;
3.State Key Laboratory for Environment-friendly Energy Materials, Southwest University of Science and Technology, Mianyang; 621010, China;
4.Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou; 730000, China
First Author AffilicationSchool of Physical Science and Technology
Corresponding Author AffilicationSchool of Physical Science and Technology
Recommended Citation
GB/T 7714
Wang, Xukun,Zhang, Wenjian,Wang, Xinge,et al. Heterostructure engineering of NiO foam /In2S3 film for high-performance ethylene glycol gas sensors[J]. SENSORS AND ACTUATORS B-CHEMICAL,2023,392.
APA Wang, Xukun.,Zhang, Wenjian.,Wang, Xinge.,Li, Xijuan.,Sui, Xinyi.,...&Zhang, Zhenxing.(2023).Heterostructure engineering of NiO foam /In2S3 film for high-performance ethylene glycol gas sensors.SENSORS AND ACTUATORS B-CHEMICAL,392.
MLA Wang, Xukun,et al."Heterostructure engineering of NiO foam /In2S3 film for high-performance ethylene glycol gas sensors".SENSORS AND ACTUATORS B-CHEMICAL 392(2023).
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