兰州大学机构库
Wafer-Scale Epitaxial Growth of the Thickness-Controllable Van Der Waals Ferromagnet CrTe2 for Reliable Magnetic Memory Applications
2023-09-08
Online publication date2023-09
Source PublicationADVANCED FUNCTIONAL MATERIALS   Impact Factor & Quartile
ISSN1616-301X ; 1616-3028
page numbers8
AbstractTo harness the intriguing properties of 2D van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, the epitaxial growth of single-crystalline 1T-CrTe2 thin films on 2-inch sapphire substrates are demonstrated. Benefiting from the uniform surface energy of the dangling bond-free Al2O3(0001) surface, the layer-by-layer vdW growth mode is observed right from the initial growth stage, which warrants precise control of the sample thickness beyond three monolayer and homogeneous surface morphology across the entire wafer. Moreover, the presence of the Coulomb interaction at the CrTe2/Al2O3 interface plays an important role in tailoring the anomalous Hall response, and the structural optimization of the CrTe2-based spin-orbit torque device leads to a substantial switching power reduction by 54%. The results may lay out a general framework for the design of energy-efficient spintronics based on configurable vdW FMs.
Keyword2D ferromagnets interface engineering spin-orbit torque switches van der Waals heterostructures wafer-scale epitaxial growth
PublisherWILEY-V C H VERLAG GMBH
DOI10.1002/adfm.202304454
Indexed BySCIE
Language英语
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:001064025900001
Original Document TypeArticle ; Early Access
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttps://ir.lzu.edu.cn/handle/262010/568278
Collection兰州大学
材料与能源学院
Corresponding AuthorLi, Gang; Yao, Qi; Kou, Xufeng
Affiliation
1.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China;
2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China;
3.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China;
4.Lanzhou Univ, Sch Mat & Energy, Lanzhou 730000, Peoples R China;
5.Tsinghua Univ, Beijing Innovat Ctr Future Chips, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China;
6.Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China;
7.Diamond Light Source, Harwell Sci & Innovat Campus, Didcot OX11 0DE, Oxon, England;
8.Univ Oxford, Dept Phys, Oxford OX1 3PU, England;
9.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Liu, Xinqi,Huang, Puyang,Xia, Yunyouyou,et al. Wafer-Scale Epitaxial Growth of the Thickness-Controllable Van Der Waals Ferromagnet CrTe2 for Reliable Magnetic Memory Applications[J]. ADVANCED FUNCTIONAL MATERIALS,2023.
APA Liu, Xinqi.,Huang, Puyang.,Xia, Yunyouyou.,Gao, Lei.,Liao, Liyang.,...&Kou, Xufeng.(2023).Wafer-Scale Epitaxial Growth of the Thickness-Controllable Van Der Waals Ferromagnet CrTe2 for Reliable Magnetic Memory Applications.ADVANCED FUNCTIONAL MATERIALS.
MLA Liu, Xinqi,et al."Wafer-Scale Epitaxial Growth of the Thickness-Controllable Van Der Waals Ferromagnet CrTe2 for Reliable Magnetic Memory Applications".ADVANCED FUNCTIONAL MATERIALS (2023).
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