兰州大学机构库
Design and simulation of 4H-SiC low gain avalanche diode
Yang, Tao1,3; Fu, Chenxi4; Song, Weimin4; Tan, Yuhang5; Xiao, Suyu6; Wang, Congcong1,2; Liu, Kai7,8,9; Zhang, Xiyuan1,2; Shi, Xin1,2
2023-11
Online publication date2023-09
Source PublicationNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Impact Factor & Quartile
ISSN0168-9002 ; 1872-9576
EISSN1872-9576
Volume1056
page numbers6
AbstractIn the applications of nuclear and high-energy physics, Silicon Low Gain Avalanche Diodes (Si LGAD) as particle detectors have been shown to perform well in time resolution. Compared with silicon, 4H Silicon Carbide (4H-SiC) has a wider band gap, better radiation resistance, higher saturated carrier velocity and lower temperature sensitivity. Therefore, 4H-SiC LGAD is suitable for the detection of Minimum Ionization Particles (MIPs) under extreme radiation and temperature. However, due to the complexity of SiC device design and production, high performance SiC LGAD devices have not yet been produced. In this work, we use TCAD tools to design and simulate two n-type 4H-SiC LGAD structures with different electric field profiles, I/V and C/V characteristics and gain efficiencies. Through the analysis of simulation results, the LGAD with a triangle electric field profile in the gain layer has a higher gain efficiency, while the design with a trapezoid electric field profile is less affected by the gain layer thickness and more stable at high temperature. Subsequently, we will develop a set of SiC production processes under the guidance of this work.
KeywordLGAD 4H-siC Semiconductor particle detector TCAD
PublisherELSEVIER
DOI10.1016/j.nima.2023.168677
Indexed BySCIE
Language英语
WOS Research AreaInstruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS SubjectInstruments & Instrumentation ; Nuclear Science & Technology ; Physics, Nuclear ; Physics, Particles & Fields
WOS IDWOS:001084145900001
Original Document TypeArticle
Citation statistics
Document Type期刊论文
Identifierhttps://ir.lzu.edu.cn/handle/262010/568359
Collection兰州大学
Corresponding AuthorShi, Xin
Affiliation
1.Chinese Acad Sci, Inst High Energy Phys, 19B Yuquan Rd, Beijing 100049, Peoples R China;
2.State Key Lab Particle Detect & Elect, 19B Yuquan Rd, Beijing 100049, Peoples R China;
3.Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China;
4.Jilin Univ, Coll Phys, 2699 Qianjin Ave, Changchun 130015, Peoples R China;
5.Chinese Acad Sci, Shenzhen Inst Adv Technol, Res Ctr Med Artificial Intelligence, 1068 Xueyuan Ave, Shenzhen 518055, Peoples R China;
6.Shandong Inst Adv Technol, 100 Fanlong Rd, Jinan 250103, Peoples R China;
7.Lanzhou Univ, Sch Nucl Sci & Technol, 222 Tianshui Rd South, Lanzhou 730000, Peoples R China;
8.Lanzhou Univ, Frontiers Sci Ctr Rare Isotopes, 222 Tianshui Rd South, Lanzhou 730000, Peoples R China;
9.Lanzhou Univ, Lanzhou Ctr Theoret Phys, 222 Tianshui Rd South, Lanzhou 730000, Peoples R China
Recommended Citation
GB/T 7714
Yang, Tao,Fu, Chenxi,Song, Weimin,et al. Design and simulation of 4H-SiC low gain avalanche diode[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,2023,1056.
APA Yang, Tao.,Fu, Chenxi.,Song, Weimin.,Tan, Yuhang.,Xiao, Suyu.,...&Shi, Xin.(2023).Design and simulation of 4H-SiC low gain avalanche diode.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,1056.
MLA Yang, Tao,et al."Design and simulation of 4H-SiC low gain avalanche diode".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 1056(2023).
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