兰州大学机构库
Quasi-Continuous Defect Levels in Broadband Gap: A New Strategy for High-Temperature Long Persistent Luminescence Materials
Zhang, Pan1; Chen, Xiang1,2; Bai, Yuxing1; Zhao, Xiaohui1; Fu, Xuewen1,2; Wu, Li1; Wang, Yuhua3; Sun, Tongqing1; Kong, Yongfa1; Zhang, Yi4,5; Xu, Jingjun1
2023-09-28
Online publication date2023-09
Source PublicationAdvanced Optical Materials   Impact Factor & Quartile
ISSN2195-1071
page numbers9
AbstractLong persistent luminescence (LPL) materials widely employed in the fields of emergency lighting and anti-counterfeiting are mostly used at room temperature. As temperatures rise, the performance of LPL materials deteriorates dramatically, which hinders their application in in vivo imaging, high-temperature display, and information storage. Herein, a multifunctional material LiGa5O8:Tb3+ (LGT) with green high-temperature LPL (HT-LPL) and blue cathodoluminescence (CL) is reported. Its LPL performance is anomalously enhanced with increasing temperature, and the duration time is more than 8 h at 423 K. With combined temperature-dependent decay curves and thermoluminescence analyses, the unique quasi-continuous defect levels are found in the band gap. The high-concentration carriers in deep traps are frozen at room temperature and activated only at high temperatures, accompanied by changes in energy transfer pathways. The excellent HT-LPL makes LGT a light-emitting component of next-generation smart wearable devices, as well as high-temperature warning equipment in deep well exploration at a depth of 4500 m. The intense anti-degradation blue CL makes it suitable for field emission displays, while the manipulable emission property makes it suitable for high-level anti-counterfeiting. This study fills a gap in HT-LPL materials and opens up a new gateway for the efficient design of HT-LPL and other multifunctional materials. Through trap control engineering, the unique quasi-continuous defect levels are introduced in the broadband gap material LiGa5O8. The carrier activation states and transfer pathways are influenced by the ambient temperature. This research provides a new strategy to construct high-temperature long persistent luminescence (HT-LPL) materials and demonstrates the application prospects of LiGa5O8:Tb3+ (LGT) in deep well exploration and smart wearable devices.image
Keyworddefects high temperatures long persistent luminescence trap distributions
PublisherWILEY-V C H VERLAG GMBH
DOI10.1002/adom.202301406
Indexed BySCIE
Language英语
WOS Research AreaMaterials Science ; Optics
WOS SubjectMaterials Science, Multidisciplinary ; Optics
WOS IDWOS:001072671200001
Original Document TypeArticle ; Early Access
Citation statistics
Document Type期刊论文
Identifierhttps://ir.lzu.edu.cn/handle/262010/569196
Collection兰州大学
Corresponding AuthorWu, Li; Wang, Yuhua; Sun, Tongqing
Affiliation
1.Nankai Univ, Sch Phys, Key Lab Weak Light Nonlinear Photon, Minist Educ, Tianjin 300071, Peoples R China;
2.Nankai Univ, Sch Phys, Ultrafast Electron Microscopy Lab, Tianjin 300071, Peoples R China;
3.Lanzhou Univ, Sch Mat & Energy, Natl & Local Joint Engn Lab Opt Convers Mat & Tech, Natl Dev & Reform Commiss, Lanzhou 730000, Peoples R China;
4.Nankai Univ, Coll Elect Informat & Opt Engn, Tianjin 300350, Peoples R China;
5.Nankai Univ, Tianjin Key Lab Photoelect Thin Film Devices & Tec, Tianjin 300350, Peoples R China
Recommended Citation
GB/T 7714
Zhang, Pan,Chen, Xiang,Bai, Yuxing,et al. Quasi-Continuous Defect Levels in Broadband Gap: A New Strategy for High-Temperature Long Persistent Luminescence Materials[J]. Advanced Optical Materials,2023.
APA Zhang, Pan.,Chen, Xiang.,Bai, Yuxing.,Zhao, Xiaohui.,Fu, Xuewen.,...&Xu, Jingjun.(2023).Quasi-Continuous Defect Levels in Broadband Gap: A New Strategy for High-Temperature Long Persistent Luminescence Materials.Advanced Optical Materials.
MLA Zhang, Pan,et al."Quasi-Continuous Defect Levels in Broadband Gap: A New Strategy for High-Temperature Long Persistent Luminescence Materials".Advanced Optical Materials (2023).
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