| Piezotronic Transistors Based on GaN Wafer for Highly Sensitive Pressure Sensing with High Linearity and High Stability | |
| Chen, Changyu1; Yu, Qiuhong1,2; Liu, Shuhai1; Qin, Yong3 | |
| 2024-05-15 | |
| Online publication date | 2024-05 |
| Source Publication | ACS Nano Impact Factor & Quartile Of Published Year The Latest Impact Factor & Quartile |
| ISSN | 1936-0851 |
| EISSN | 1936-086X |
| Volume | 18Issue:21Pages:13607-13617 |
| page numbers | 11 |
| Abstract | Piezotronic effect utilizing strain-induced piezoelectric polarization to achieve interfacial engineering in semiconductor nanodevices exhibits great advantages in applications such as human-machine interfacing, micro/nanoelectromechanical systems, and next-generation sensors and transducers. However, it is a big challenge but highly desired to develop a highly sensitive piezotronic device based on piezoelectric semiconductor wafers and thus to push piezotronics toward wafer-scale applications. Here, we develop a bicrystal barrier-based piezotronic transistor for highly sensitive pressure sensing by p-GaN single-crystal wafers. Its pressure sensitivity can be as high as 19.83 meV/MPa, which is more than 15 times higher than previous bulk-material-based piezotronic transistors and reaches the level of nanomaterial-based piezotronic transistors. Moreover, it can respond to a very small strain of 3.3 x 10(-6) to 1.1 x 10(-5) with high gauge factors of 1.45 x 10(5) to 1.38 x 10(6), which is a very high value among various strain sensors. Additionally, it also exhibits high stability (current stability of 97.32 +/- 2.05% and barrier height change stability of 95.85 +/- 3.43%) and high linearity (R-2 similar to 0.997 +/- 0.002) in pressure sensing. This work proves the possibility of designing a bicrystal barrier as the interface to obtain a strong piezotronic effect and highly sensitive piezotronic devices based on wafers, which contributes to their applications. |
| Keyword | interfacial engineering piezotronic effect piezoelectric semiconductor GaN wafer pressuresensing |
| Publisher | AMER CHEMICAL SOC |
| DOI | 10.1021/acsnano.4c00088 |
| Indexed By | SCIE |
| Language | 英语 |
| WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| WOS Subject | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| WOS ID | WOS:001226107100001 |
| Original Document Type | Article |
| PMID | 38747681 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | https://ir.lzu.edu.cn/handle/262010/592335 |
| Collection | 兰州大学 材料与能源学院 |
| Affiliation | 1.Lanzhou Univ, Inst Nanosci & Nanotechnol, Sch Mat & Energy, Lanzhou 730000, Gansu, Peoples R China; 2.Henan Univ Sci & Technol, Sch Phys & Engn, Henan Key Lab Photoelect Energy Storage Mat & Appl, Luoyang 471000, Henan, Peoples R China; 3.Beijing Inst Technol, Sch Opt & Photon, MIIT Key Lab Complex field Intelligent Explorat, Beijing 100081, Peoples R China |
| First Author Affilication | School of Materials & Energy,Lanzhou University |
| First Signature Affilication | School of Materials & Energy,Lanzhou University |
| Recommended Citation GB/T 7714 | Chen, Changyu,Yu, Qiuhong,Liu, Shuhai,et al. Piezotronic Transistors Based on GaN Wafer for Highly Sensitive Pressure Sensing with High Linearity and High Stability[J]. ACS Nano,2024,18(21):13607-13617. |
| APA | Chen, Changyu,Yu, Qiuhong,Liu, Shuhai,&Qin, Yong.(2024).Piezotronic Transistors Based on GaN Wafer for Highly Sensitive Pressure Sensing with High Linearity and High Stability.ACS Nano,18(21),13607-13617. |
| MLA | Chen, Changyu,et al."Piezotronic Transistors Based on GaN Wafer for Highly Sensitive Pressure Sensing with High Linearity and High Stability".ACS Nano 18.21(2024):13607-13617. |
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