兰州大学机构库 >化学化工学院
Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors
Yu, C; Liu, HM; Ni, WB; Gao, NY; Zhao, JW; Zhang, HL(张浩力); Zhao, JW (reprint author), Nanjing Univ, Sch Chem & Chem Engn, Minist Educ, Key Lab Analyt Chem Life Sci, Nanjing 210008, Peoples R China.
2011
Source PublicationPHYSICAL CHEMISTRY CHEMICAL PHYSICS   Impact Factor & Quartile Of Published Year  The Latest Impact Factor & Quartile
ISSN1463-9076
Volume13Issue:8
AbstractWe designed acene molecules attached to two semi-infinite metallic electrodes to explore the source-drain current of graphene and the gate leakage current of the gate dielectric material in the field-effect transistors (FETs) device using the first-principles density functional theory combined with the non-equilibrium Green's function formalism. In the acene-based molecular junctions, we modify the connection position of the thiol group at one side, forming different electron transport routes. The electron transport routes besides the shortest one are defined as the cross channels. The simulation results indicate that electron transport through the cross channels is as efficient as that through the shortest one, since the conductance is weakly dependent on the distance. Thus, it is possible to connect the graphene with multiple leads, leading the graphene as a channel utilized in the graphene-based FETs in the mesoscopic system. When the conjugation of the cross channel is blocked, the junction conductance decreases dramatically. The differential conductance of the BA-1 is nearly 7 (54.57 mu S) times as large as that of the BA-4 (7.35 mu S) at zero bias. Therefore, the blocked graphene can be employed as the gate dielectric material in the top-gated graphene FET device, since the leakage current is small. The graphene-based field-effect transistors fabricated with a single layer of graphene as the channel and the blocked graphene as the gate dielectric material represent one way to overcome the problem of miniaturization which faces the new generation of transistors.
Subject AreaChemistry ; Physics
PublisherROYAL SOC CHEMISTRY
DOI10.1039/c0cp01026j
Publication PlaceCAMBRIDGE
Indexed BySCIE ; PubMed
Language英语
First Inst
Funding Project国家自然科学基金项目 ; 国家重点基础研究发展计划以及国家重大科学研究计划(973计划)
Project NumberNational Natural Science Foundation of China (NSFC) [20821063, 20873063, 51071084] ; National Basic Research Program of China (973 Program) [2010CB732400] ; Natural Science Foundation of Jiangsu Province [BK2010389] ; State Key Laboratory of Applied Organic Chemistry (Lanzhou University)
WOS IDWOS:000287041700052
Funding OrganizationNational Natural Science Foundation of China (NSFC) [20821063, 20873063, 51071084]; National Basic Research Program of China (973 Program) [2010CB732400]; Natural Science Foundation of Jiangsu Province [BK2010389]; State Key Laboratory of Applied Organic Chemistry (Lanzhou University) ; NSFC ; MOST ; LZU
SubtypeArticle
PMID 21240394
Department[Yu, Cui;
Liu, Hongmei;
Ni, Wenbin;
Gao, Nengyue;
Zhao, Jianwei] Nanjing Univ, Sch Chem & Chem Engn, Minist Educ, Key Lab Analyt Chem Life Sci, Nanjing 210008, Peoples R China;
[Zhang, Haoli] Lanzhou Univ, State Key Lab Appl Organ Chem, Lanzhou 730000, Gansu, Peoples R China;
[Zhang, Haoli] Lanzhou Univ, Coll Chem & Chem Engn, Lanzhou 730000, Gansu, Peoples R China
Citation statistics
Document Type期刊论文
Identifierhttps://ir.lzu.edu.cn/handle/262010/76384
Collection化学化工学院
兰州大学
Corresponding AuthorZhao, JW (reprint author), Nanjing Univ, Sch Chem & Chem Engn, Minist Educ, Key Lab Analyt Chem Life Sci, Nanjing 210008, Peoples R China.
Recommended Citation
GB/T 7714
Yu, C,Liu, HM,Ni, WB,et al. Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2011,13(8).
APA Yu, C.,Liu, HM.,Ni, WB.,Gao, NY.,Zhao, JW.,...&Zhao, JW .(2011).Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,13(8).
MLA Yu, C,et al."Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 13.8(2011).
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