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High performance self-powered ultraviolet photodetectors based on electrospun gallium nitride nanowires 期刊论文
APPLIED SURFACE SCIENCE, 2018, 卷号: 452, 期号: null, 页码: 43–48
Authors:  Mingxiang Zhang;  Ying Liu;  Mengqi Yang;  Wen Zhang;  Zhou, JY(周金元);  Zhang, ZX(张振兴);  Xie, EQ(谢二庆);  Pan, XJ(潘孝军);  Shibo Li
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Ultraviolet Photodetectors  Photoelectrochemical  Gallium Nitridenanowires  Electrospinning  
Optical properties of GaN:Tb nanoparticles synthesized by simple ammonification method 期刊论文
ACTA PHYSICA SINICA, 2012, 期号: 3, 页码: 12-16
Authors:  Pan XJ(潘孝军);  An XY(安秀云);  Zhang HJ(张海军);  Zhang ZX(张振兴);  Xie EQ(谢二庆)
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GaN:Tb纳米颗粒  Raman  光致发光  氨还原法  GaN:Tb nanoparticles  Raman  photoluminescence  ammonification method  
Structural and optical study of irradiation effect in GaN epilayers induced by 308 MeV Xe ions 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2011, 卷号: 269, 期号: 15, 页码: 1782-1785
Authors:  Zhang, LM(张利民);  Zhang, CH;  Zhang, LQ;  Jia, XJ;  Ma, TD;  Song, Y;  Yang, YT;  Li, BS;  Jin, YF;  Zhang, CH (reprint author), Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China....Zhang, LM(张利民);  Zhang, CH;  Zhang, LQ;  Jia, XJ;  Ma, TD;  Song, Y;  Yang, YT;  Li, BS;  Jin, YF;  Zhang, CH (reprint author), Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China.
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GaN  Ion irradiation  AFM  HRXRD  Raman scattering  PL  
Decoding the mechanism of the mechanical transfer of a GaN-based heterostructure via an h-BN release layer in a device configuration 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 12, 页码: -
Authors:  Wang, GX;  Yang, DZ(杨德政);  Zhang, ZY(张稚雅);  Si, MS(司明苏);  Xue, DS(薛德胜);  He, HY;  Pandey, R;  Si, MS (reprint author), Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China.
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Yellow and red luminescence in Mg-implanted GaN epitaxial films 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 卷号: 264, 期号: 1, 页码: 41-46
Authors:  You, W;  Zhang, XD(张小东);  Zhang, LM(张利民);  Yang, Z;  Bian, H;  Liu, ZM;  Liu, ZM (reprint author), Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China.
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gallium nitride (GaN)  ion implantation  photoluminescence spectra  infrared spectra  
Optical properties of amorphous GaN films deposited by sputtering 期刊论文
ACTA PHYSICA SINICA, 2009, 期号: 5, 页码: 3377-3382
Authors:  Jia L(贾璐);  Xie EQ(谢二庆);  Pan XJ(潘孝军);  Zhang ZX(张振兴)
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非晶氮化镓  溅射  光学带隙  带尾态  amorphous GaN  sputtering  absorption  band tail  
Optical properties of nanocrystalline GaN films prepared by annealing amorphous GaN in ammonia 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2008, 卷号: 37, 期号: 8, 页码: 1049-1053
Authors:  Zhang, ZX(张振兴);  Pan, XJ(潘孝军);  Wang, T(王涛);  Jia, L;  Liu, LX;  Wang, WB;  Xie, EQ(谢二庆);  Zhang, ZX (reprint author), Lanzhou Univ, Dept Phys, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China.
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gallium nitride  photoluminescence  Raman spectroscopy  nanocrystalline  ammonification  
Transfer characteristics in a GaN MFSFET: comparison with a conventional GaN MOSFET 期刊论文
INTERNATIONAL JOURNAL OF ELECTRONICS, 2012, 卷号: 99, 期号: 7, 页码: 987-993
Authors:  Ran, JZ(冉金枝);  Ying, W;  Cai, XY;  Yang, JH(杨建红);  Yang, JH (reprint author), Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
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GaN-based  ferroelectric  MFSFET  transfer characteristic  
HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3 MeV Ne and 5.3 MeV Kr ions 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2011, 卷号: 269, 期号: 10, 页码: 1063-1066
Authors:  Zhang, LM(张利民);  Zhang, CH;  Zhang, LQ;  Jia, XJ;  Han, LH;  Xu, CL;  Zhang, Y;  Jin, YF;  Zhang, CH (reprint author), Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China.
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InGaN  Ion irradiation  HRXRD  Raman scattering