兰州大学机构库

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An overview of resistive random access memory devices 期刊论文
CHINESE SCI BULL, 2011, 卷号: 56, 期号: 28-29, 页码: 3072-3078
Authors:  Li, YT(李颖弢);  Long, SB;  Liu, Q;  Lu, HB;  Liu, S(刘肃);  Liu, M;  Liu, M (reprint author), Chinese Acad Sci, Lab Nanofabricat & Novel Device Integrat, Inst Microelect, Beijing 100029, Peoples R China.
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resistive random access memory  resistive switching  performance parameters  
Resistive Switching in Single Epitaxial ZnO Nanoislands 期刊论文
ACS Nano, 2012, 卷号: 6, 期号: 2, 页码: 1051-1058
Authors:  Qi, J(祁菁);  Olmedo, M;  Ren, JJ;  Zhan, N;  Zhao, JZ;  Zheng, JG;  Liu, JL;  Qi, J (reprint author), Lanzhou Univ, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Peoples R China.
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Resistive Memory Scaling  Switching Mechanism  C-afm  Zno  Nanoisland  Conducting Filament  
Investigation of resistive switching behaviours in WO3-based RRAM devices 期刊论文
Chinese Physics B, 2011, 卷号: 20, 期号: 1, 页码: -
Authors:  Li, YT(李颖弢);  Long, SB;  Lu, HB;  Liu, Q;  Wang, Q;  Wang, Y;  Zhang, S;  Lian, WT;  Liu, S(刘肃);  Liu, M...Li, YT(李颖弢);  Long, SB;  Lu, HB;  Liu, Q;  Wang, Q;  Wang, Y;  Zhang, S;  Lian, WT;  Liu, S(刘肃);  Liu, M;  Liu, S (reprint author), Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
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resistive random access memory  resistive switching  nonvolatile  WO3  
Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 12, 页码: -
Authors:  Xie, HW;  Liu, Q;  Li, YT(李颖弢);  Lv, HB;  Wang, M;  Liu, XY;  Sun, HT;  Yang, XY;  Long, SB;  Liu, S(刘肃)...Xie, HW;  Liu, Q;  Li, YT(李颖弢);  Lv, HB;  Wang, M;  Liu, XY;  Sun, HT;  Yang, XY;  Long, SB;  Liu, S(刘肃);  Liu, M;  Xie, HW (reprint author), Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
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Programming resistive switching memory by a charged capacitor 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 102, 期号: 4, 页码: 1003-1007
Authors:  Zhang, S;  Liu, Q;  Wang, W;  Lv, HB;  Zuo, QY;  Wang, Y;  Li, YT(李颖弢);  Lian, WT;  Long, SB;  Wang, Q...Zhang, S;  Liu, Q;  Wang, W;  Lv, HB;  Zuo, QY;  Wang, Y;  Li, YT(李颖弢);  Lian, WT;  Long, SB;  Wang, Q;  Liu, M;  Liu, M (reprint author), Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China.
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Switching performances of static induction thyristor with buried-gate structure 期刊论文
Science China-Information Sciences, 2014, 卷号: 57, 期号: 6, 页码: -
Authors:  Liu ChunJuan;  Liu Su;  Bai YaJie
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static induction thyristor  switching performance  potential barrier  two-dimensional dynamical model  gate driving  
Improving the electrical performance of resistive switching memory using doping technology 期刊论文
CHINESE SCI BULL, 2012, 卷号: 57, 期号: 11, 页码: 1235-1240
Authors:  Wang, Y;  Liu, Q;  Lu, HB;  Long, SB;  Wang, W;  Li, YT(李颖弢);  Zhang, S;  Lian, WT;  Yang, JH(杨建红);  Liu, M...Wang, Y;  Liu, Q;  Lu, HB;  Long, SB;  Wang, W;  Li, YT(李颖弢);  Zhang, S;  Lian, WT;  Yang, JH(杨建红);  Liu, M;  Liu, M (reprint author), Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Device Integrat, Beijing 100029, Peoples R China.
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non-volatile memory  resistive random access memory (RRAM)  doping technology  
Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer 期刊论文
NANOTECHNOLOGY, 2011, 卷号: 22, 期号: 25, 页码: -
Authors:  Li, YT(李颖弢);  Long, SB;  Lv, HB;  Liu, Q;  Wang, Y;  Zhang, S;  Lian, WT;  Wang, M;  Zhang, KW;  Xie, HW...Li, YT(李颖弢);  Long, SB;  Lv, HB;  Liu, Q;  Wang, Y;  Zhang, S;  Lian, WT;  Wang, M;  Zhang, KW;  Xie, HW;  Liu, S(刘肃);  Liu, M;  Liu, M (reprint author), Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China.
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Resistive Switching Properties of Au/ZrO2/Ag Structure for Low-Voltage Nonvolatile Memory Applications 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2010, 卷号: 31, 期号: 2, 页码: 117-119
Authors:  Yingtao Li;  Shibing Long;  Manhong Zhang;  Qi Liu;  Lubing Shao;  Sen Zhang;  Yan Wang;  Qingyun Zuo;  Liu, S(刘肃);  Ming Liu...Yingtao Li;  Shibing Long;  Manhong Zhang;  Qi Liu;  Lubing Shao;  Sen Zhang;  Yan Wang;  Qingyun Zuo;  Liu, S(刘肃);  Ming Liu
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Low Voltage  Silver  Nonvolatile Memory  Solids  Electrodes  Gold  Temperature  Random Access Memory  Laboratories  Nanoscale Devices  
Hydrothermal epitaxial growth and nonvolatile bipolar resistive switching behavior of LaFeO3-PbTiO3 films on Nb:SrTiO3(001) substrate 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 15, 页码: -
Authors:  Zhang, Peng;  Gao, CX(高存绪);  Lv, Fengzhen;  Wei, Yanping;  Dong, Chunhui;  Jia, CL(贾成龙);  Liu, QF(刘青芳);  Xue, DS(薛德胜)
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