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兰州大学机构库

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Wafer-Scale Epitaxial Growth of the Thickness-Controllable Van Der Waals Ferromagnet CrTe2 for Reliable Magnetic Memory Applications 期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2023
Authors:  Liu, Xinqi;  Huang, Puyang;  Xia, Yunyouyou;  Gao, Lei;  Liao, Liyang;  Cui, Baoshan;  Backes, Dirk;  van der Laan, Gerrit;  Hesjedal, Thorsten;  Ji, Yuchen...Liu, Xinqi;  Huang, Puyang;  Xia, Yunyouyou;  Gao, Lei;  Liao, Liyang;  Cui, Baoshan;  Backes, Dirk;  van der Laan, Gerrit;  Hesjedal, Thorsten;  Ji, Yuchen;  Chen, Peng;  Zhang, Yifan;  Wu, Fan;  Wang, Meixiao;  Zhang, Junwei;  Yu, Guoqiang;  Song, Cheng;  Chen, Yulin;  Liu, Zhongkai;  Yang, Yumeng;  Peng, Yong;  Li, Gang;  Yao, Qi;  Kou, Xufeng
Favorite  |    Submit date：2023/11/28
2D ferromagnets  interface engineering  spin-orbit torque switches  van der Waals heterostructures  wafer-scale epitaxial growth  
Robust spin torque switching of noncollinear antiferromagnet Mn3Sn 期刊论文
APL Materials, 2023, 卷号: 11, 期号: 7
Authors:  Xu, Teng;  Bai, Hao;  Dong, Yiqing;  Zhao, Le;  Zhou, Heng-An;  Zhang, Junwei;  Zhang, Xi-Xiang;  Jiang, Wanjun
Favorite  |    Submit date：2023/11/28
过渡金属Cr中轨道霍尔效应和拓扑半金属PtSe2中自旋霍尔效应研究 学位论文
理学硕士, 兰州: 兰州大学, 2023
Authors:  谢宏斐
Favorite  |    Submit date：2023/11/15
轨道霍尔效应  orbital Hall effect  轨道转矩  orbital torque  自旋霍尔效应  spin Hall effect  自旋轨道转矩  spin-orbital torque  磁矩翻转  magnetization switching  
Investigation of band alignment at two-dimensional ReS2/XSe2 (X=W, Mo) heterojunctions using x-ray/ultraviolet photoelectron spectroscopy 期刊论文
Physics Letters, Section A: General, Atomic and Solid State Physics, 2022
Huang, Heyuan; Zhao, Guijuan; Xing, Shu'an; Mao, Bangyao; Lv, Xiurui; Liu, Guipeng; Li, Xunshuan; Yang, Wenge; Yang, Jianhong
Favorite  |    Submit date：2022/11/14
Investigation of band alignment at two-dimensional ReS2/XSe2 (X=W, Mo) heterojunctions using x-ray/ultraviolet photoelectron spectroscopy 期刊论文
PHYSICS LETTERS A, 2022, 卷号: 445
Authors:  Huang, Heyuan;  Zhao, Guijuan;  Xing, Shu'an;  Mao, Bangyao;  Lv, Xiurui;  Liu, Guipeng;  Li, Xunshuan;  Yang, Wenge;  Yang, JH(杨建红)
Favorite  |    Submit date：2022/11/08
Alignment  Heterojunctions  Monolayers  Optoelectronic devices  Photoelectrons  Photons  Rhenium compounds  Selenium compounds  Tungsten compounds  Valence bands  Van der Waals forces  2d material  Andersons  Band alignments  High quality  Two-dimensional  Type II band alignments  UPS  Valence-band offset  Van der Waal  X-ray photoelectrons  
Investigation of band alignment at two-dimensional ReS2/XSe2 (X=W, Mo) heterojunctions using x-ray/ultraviolet photoelectron spectroscopy 期刊论文
PHYSICS LETTERS A, 2022, 卷号: 445
Authors:  Huang, Heyuan;  Zhao, Guijuan;  Xing, Shu'an;  Mao, Bangyao;  Lv, Xiurui;  Liu, Guipeng;  Li, Xunshuan;  Yang, Wenge;  Yang, Jianhong
Favorite  |    Submit date：2023/01/03
Alignment  Heterojunctions  Monolayers  Optoelectronic devices  Photoelectrons  Photons  Rhenium compounds  Selenium compounds  Tungsten compounds  Valence bands  Van der Waals forces  2d material  Andersons  Band alignments  High quality  Two-dimensional  Type II band alignments  UPS  Valence-band offset  Van der Waal  X-ray photoelectrons  
Polarization-Driven-Orientation Selective Growth of Single-Crystalline III-Nitride Semiconductors on Arbitrary Substrates 期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2022, 卷号: 32, 期号: 14
Authors:  Liu, Danshuo;  Hu, Lin;  Yang, Xuelin;  Zhang, Zhihong;  Yu, Haodong;  Zheng, Fawei;  Feng, Yuxia;  Wei, Jiaqi;  Cai, Zidong;  Chen, Zhenghao...Liu, Danshuo;  Hu, Lin;  Yang, Xuelin;  Zhang, Zhihong;  Yu, Haodong;  Zheng, Fawei;  Feng, Yuxia;  Wei, Jiaqi;  Cai, Zidong;  Chen, Zhenghao;  Ma, Cheng;  Xu, Fujun;  Wang, Xinqiang;  Ge, Weikun;  Liu, Kaihui;  Huang, Bing;  Shen, Bo
Favorite  |    Submit date：2022/04/20
arbitrary substrates  in-plane orientation  polarization-driven-orientation selective growth  physical vapor deposited AlN  single-crystalline GaN  single-crystalline graphene  Aluminum nitride  Amorphous silicon  Boron nitride  Buffer layers  Calculations  Chemical vapor deposition  Gallium nitride  Graphene  Optoelectronic devices  Polarization  Sapphire  Silica  Silicon carbide  Substrates  Wide band gap semiconductors  Arbitrary substrate  In-plane orientation  Physical vapor deposited  Physical vapor deposited aluminum nitride  Polarization-driven-orientation selective growth  Selective growth  Single-crystalline  Single-crystalline gallium nitride  Single-crystalline graphene  Vapor deposited aluminum  
Wafer-scale single-crystal monolayer graphene grown on sapphire substrate 期刊论文
NATURE MATERIALS, 2022, 卷号: 21, 期号: 7, 页码: 740-+
Authors:  Li, Junzhu;  Chen, Mingguang;  Samad, Abdus;  Dong, Haocong;  Ray, Avijeet;  Zhang, Junwei;  Jiang, Xiaochuan;  Schwingenschlogl, Udo;  Domke, Jari;  Chen, Cailing...Li, Junzhu;  Chen, Mingguang;  Samad, Abdus;  Dong, Haocong;  Ray, Avijeet;  Zhang, Junwei;  Jiang, Xiaochuan;  Schwingenschlogl, Udo;  Domke, Jari;  Chen, Cailing;  Han, Yu;  Fritz, Torsten;  Ruoff, Rodney S.;  Tian, Bo;  Zhang, Xixiang
Favorite  |    Submit date：2022/04/20
Epitaxial growth of ZrSe2nanosheets on sapphire: Via chemical vapor deposition for optoelectronic application 期刊论文
Journal of Materials Chemistry C, 2021, 卷号: 9, 期号: 39, 页码: 13954-13962
Authors:  Tian, Yan;  Zheng, Maoyuan;  Cheng, Yong;  Yin, Zhigang;  Jiang, Ji;  Wang, Gaokai;  Chen, Jingren;  Li, Xingxing;  Qi, Jing;  Zhang, Xingwang...Tian, Yan;  Zheng, Maoyuan;  Cheng, Yong;  Yin, Zhigang;  Jiang, Ji;  Wang, Gaokai;  Chen, Jingren;  Li, Xingxing;  Qi, Jing;  Zhang, Xingwang
Favorite  |    Submit date：2021/12/14
Alumina  Aluminumoxide  Chemicalvapordeposition  Densityfunctionaltheory  Electronicproperties  Energygap  Sapphire  Seleniumcompounds  Substrates  Transitionmetals  Zirconiumcompounds  Atomicallysharpinterface  C  planesapphiresubstrates  Chemicalvapordepositionmethods  Chemicalvapourdeposition  Dichalcogenides  Electronicbandstructure  Epitaxialrelationships  Highquality  Low  pressurechemicalvapordeposition  Optoelectronicapplications  
Epitaxial growth of ZrSe2 nanosheets on sapphire via chemical vapor deposition for optoelectronic application 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2021, 卷号: 9, 期号: 39, 页码: 13954-13962
Tian, Yan; Zheng, Maoyuan; Cheng, Yong; Yin, Zhigang; Jiang, Ji; Wang, Gaokai; Chen, Jingren; Li, Xingxing; Qi, Jing; Zhang, Xingwang
Favorite  |    Submit date：2022/11/14