兰州大学机构库

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An overview of resistive random access memory devices 期刊论文
CHINESE SCI BULL, 2011, 卷号: 56, 期号: 28-29, 页码: 3072-3078
Authors:  Li, YT(李颖弢);  Long, SB;  Liu, Q;  Lu, HB;  Liu, S(刘肃);  Liu, M;  Liu, M (reprint author), Chinese Acad Sci, Lab Nanofabricat & Novel Device Integrat, Inst Microelect, Beijing 100029, Peoples R China.
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resistive random access memory  resistive switching  performance parameters  
Switching performances of static induction thyristor with buried-gate structure 期刊论文
Science China-Information Sciences, 2014, 卷号: 57, 期号: 6, 页码: -
Authors:  Liu, CJ;  Liu, S(刘肃);  Bai, YJ;  Liu, S (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Inst Microelect, Lanzhou 730000, Peoples R China.
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static induction thyristor  switching performance  potential barrier  two-dimensional dynamical model  gate driving  
Investigation of resistive switching behaviours in WO3-based RRAM devices 期刊论文
Chinese Physics B, 2011, 卷号: 20, 期号: 1, 页码: -
Authors:  Li, YT(李颖弢);  Long, SB;  Lu, HB;  Liu, Q;  Wang, Q;  Wang, Y;  Zhang, S;  Lian, WT;  Liu, S(刘肃);  Liu, M...Li, YT(李颖弢);  Long, SB;  Lu, HB;  Liu, Q;  Wang, Q;  Wang, Y;  Zhang, S;  Lian, WT;  Liu, S(刘肃);  Liu, M;  Liu, S (reprint author), Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
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resistive random access memory  resistive switching  nonvolatile  WO3  
Resistive Switching in Single Epitaxial ZnO Nanoislands 期刊论文
ACS Nano, 2012, 卷号: 6, 期号: 2, 页码: 1051-1058
Authors:  Qi, J(祁菁);  Olmedo, M;  Ren, JJ;  Zhan, N;  Zhao, JZ;  Zheng, JG;  Liu, JL;  Qi, J (reprint author), Lanzhou Univ, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Peoples R China.
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Resistive Memory Scaling  Switching Mechanism  C-afm  Zno  Nanoisland  Conducting Filament  
Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 12, 页码: -
Authors:  Xie, HW;  Liu, Q;  Li, YT(李颖弢);  Lv, HB;  Wang, M;  Liu, XY;  Sun, HT;  Yang, XY;  Long, SB;  Liu, S(刘肃)...Xie, HW;  Liu, Q;  Li, YT(李颖弢);  Lv, HB;  Wang, M;  Liu, XY;  Sun, HT;  Yang, XY;  Long, SB;  Liu, S(刘肃);  Liu, M;  Xie, HW (reprint author), Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
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Multimode Resistive Switching in Single ZnO Nanoisland System 期刊论文
Scientific Reports, 2013, 卷号: 3, 页码: -
Authors:  Qi, J(祁菁);  Olmedo, M;  Zheng, JG;  Liu, JL;  Qi, J (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Dept Phys, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Peoples R China.
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Improving the electrical performance of resistive switching memory using doping technology 期刊论文
CHINESE SCI BULL, 2012, 卷号: 57, 期号: 11, 页码: 1235-1240
Authors:  Wang, Y;  Liu, Q;  Lu, HB;  Long, SB;  Wang, W;  Li, YT(李颖弢);  Zhang, S;  Lian, WT;  Yang, JH(杨建红);  Liu, M...Wang, Y;  Liu, Q;  Lu, HB;  Long, SB;  Wang, W;  Li, YT(李颖弢);  Zhang, S;  Lian, WT;  Yang, JH(杨建红);  Liu, M;  Liu, M (reprint author), Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Device Integrat, Beijing 100029, Peoples R China.
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non-volatile memory  resistive random access memory (RRAM)  doping technology  
Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer 期刊论文
NANOTECHNOLOGY, 2011, 卷号: 22, 期号: 25, 页码: -
Authors:  Li, YT(李颖弢);  Long, SB;  Lv, HB;  Liu, Q;  Wang, Y;  Zhang, S;  Lian, WT;  Wang, M;  Zhang, KW;  Xie, HW...Li, YT(李颖弢);  Long, SB;  Lv, HB;  Liu, Q;  Wang, Y;  Zhang, S;  Lian, WT;  Wang, M;  Zhang, KW;  Xie, HW;  Liu, S(刘肃);  Liu, M;  Liu, M (reprint author), Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China.
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The Effect of the Non-task Language When Trilingual People Use Two Languages in a Language Switching Experiment 期刊论文
Frontiers in Psychology, 2020, 卷号: 11
Authors:  Chen, Jianlin;  Liu, Hong
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trilinguals  language switching  language comprehension  inhibition  task and non-task language  
Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switching device 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 10, 页码: -
Authors:  Xie, HW;  Liu, Q;  Li, YT(李颖弢);  Lv, HB;  Wang, M;  Zhang, KW;  Long, SB;  Liu, S(刘肃);  Liu, M;  Xie, HW (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China....Xie, HW;  Liu, Q;  Li, YT(李颖弢);  Lv, HB;  Wang, M;  Zhang, KW;  Long, SB;  Liu, S(刘肃);  Liu, M;  Xie, HW (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
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